Innovative scheme for selective carbon nanotubes integration in via structures
- Author
- FAYOLLE, M1 ; PONTCHARRA, J1 ; VANDROUX, L1 ; HUET, S1 ; GRAMPEIX, H1 ; YCKACHE, K1 ; MARIOLLE, D1 ; BILLON, T1 ; DIJON, J2 ; FOURNIER, A2 ; OKUNO, H2 ; QUESNEL, E2 ; MUFFATO, V2 ; JAYET, C1 ; LUGAND, J. F1 ; GAUTIER, P1
[1] CEA LETI-MINATEC, 17 rue des martyrs, 38054 Grenoble, France
[2] CEA LITEN, 17 rue des martyrs, 38054 Grenoble, France - Conference title
- The 2010 International workshop on Materials for Advanced Metallization - MAM 2010
- Conference name
- International workshop on Materials for Advanced Metallization, MAM 2010 (19 ; Mechelen, Malines 2010-03-07)
- Author (monograph)
- TRAVALY, Youssef (Editor)1 ; DETAVERNIER, Christophe (Editor)2
[1] IMEC, Belgium
[2] Gend University, Belgium - Source
Microelectronic engineering. 2011, Vol 88, Num 5, pp 833-836, 4 p ; ref : 12 ref
- CODEN
- MIENEF
- ISSN
- 0167-9317
- Scientific domain
- Electronics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Carbon nanotubes Integration Interconnects Nanomaterials
- Keyword (fr)
- Alumine Caractéristique électrique Circuit intégré Cuivre Damasquinage Dopage Encapsulation Fabrication microélectronique Interconnexion Matériau dopé Matériau électrode Mesure électrique Microscopie force atomique Méthode couche atomique Nanomatériau Nanotube carbone Oxyde de silicium Packaging électronique Pastille électronique Planarisation Polissage mécanochimique Polycristal Propriété électrique Silicium 8107B 8107D 8540H Al2O3 SiO2 Composé III-VI Composé IV-VI
- Keyword (en)
- Alumina Electrical characteristic Integrated circuits Copper Damascene process Doping Encapsulation Microelectronic fabrication Interconnections Doped materials Electrode material Electrical measurement Atomic force microscopy Atomic layer method Nanostructured materials Carbon nanotubes Silicon oxides Electronic packaging Wafers Planarization Chemical mechanical polishing Polycrystals Electrical properties Silicon III-VI compound IV-VI compound
- Keyword (es)
- Característica eléctrica Damasquinado Doping Fabricación microeléctrica Material electrodo Medida eléctrica Método capa atómica Packaging electrónico Compuesto III-VI Compuesto IV-VI
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07B Nanocrystalline materials
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07D Nanotubes
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 24013587
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mee.2010.07.038 
https://dx.doi.org/10.1016/j.mee.2010.07.038
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