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The SuperFET : a high-performance GaAs voltage-controlled current source for cryogenic applications

Author
CAMIN, D. V1 ; PESSINA, G1 ; PREVITALI, E1 ; RAMAIOLI, P1
[1] Dipartimento di Fisica dell'Università and Istituto Nazionale di Fisica Nucleare, 20133 Milano, Italy
Conference title
WOLTE 3 European Workshop on Low Temperature Electronics
Conference name
WOLTE 3 European Workshop on Low Temperature Electronics (3 ; San Miniato, Tuscany 1998-06-24)
Author (monograph)
BROGIATO, Luciana (Editor); CAMIN, Daniel V (Editor)1 ; PESSINA, G (Editor)1
Università degli Studi di Milano ; Dipartimento di Fisica, Italy (Funder/Sponsor)
IEEE Electron Devices Society, United States (Funder/Sponsor)
IstitutoNazionale di Fisica Nucleare, Frascati, Italy (Funder/Sponsor)
Università degli Studi di Bologna, Bologna, Italy (Funder/Sponsor)
Università degli Studi di Firenze, Firenze, Italy (Funder/Sponsor)
[1] Physics Department of the University and INFN, Dipartimento di Fisica dell'Università and Istituto Nazionale di Fisica Nucleare, INFN, via Celoria 16, 20133 Milano, Italy
Source

Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.167-Pr3.170 ; ref : 12 ref

ISSN
1155-4339
Scientific domain
Physics
Publisher
EDP sciences, Les Ulis
Publication country
France
Document type
Conference Paper
Language
English
Keyword (fr)
Calorimètre Caractéristique courant tension Circuit intégré monolithique Commande tension Comportement basse température Composé III-V Composé binaire Gallium Arséniure Préamplificateur Source courant Température cryogénique Transistor effet champ barrière Schottky
Keyword (en)
Calorimeter Voltage current curve Monolithic integrated circuit Voltage control Low temperature service behaviour III-V compound Binary compound Gallium Arsenides Preamplifier Current source Cryogenic temperature Metal semiconductor field effect transistor
Keyword (es)
Calorímetro Característica corriente tensión Circuito integrado monolítico Control tensión Comportamiento baja temperatura Compuesto III-V Compuesto binario Galio Arseniuro Preamplificador Fuente corriente Temperatura criogénica Transistor efecto campo barrera Schottky
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06B Integrated circuits by function (including memories and processors)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
2406716

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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