Spectroscopic ellipsometry studies on hydrogenated amorphous silicon thin films deposited using DC saddle field plasma enhanced chemical vapor deposition system
- Autor
- KUMAR SAHA, Jhantu1 ; BAHARDOUST, Barzin1 ; LEONG, Keith1 ; GOUGAM, Adel B2 ; KHERANI, Nazir P1 3 ; ZUKOTYNSKI, Stefan1
[1] Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
[2] Arise Technologies Corporation, 65 Northland Road, Waterloo, Ontario N2V 1Y8, Canada
[3] Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, OntarioM5S 3E4, Canada - Titulo de la conferencia
- 5th International Conference on Spectroscopic Ellipsometry (ICSE-V)
- Nombre de la conferencia
- International Conference on Spectroscopic Ellipsometry (ICSE-V) (ICSE-V) (5 ; Albany, NY 2010-05-23)
- Autor ( monografía)
- TOMPKINS, Harland G (Editor)
- Fuente
Thin solid films. 2011, Vol 519, Num 9, pp 2863-2866, 4 p ; ref : 32 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Campo Científico
- Crystallography; Metallurgy, welding; Condensed state physics
- Editor
- Elsevier, Amsterdam
- País de la publicación
- Netherlands
- Tipo de documento
- Conference Paper
- Idioma
- English
- Palabra clave de autor
- DC saddle field Hydrogenated amorphous silicon Spectroscopic ellipsometry
- Palabra clave (fr)
- Bande interdite photonique Cavité dans réseau Couche mince amorphe Couche mince Défaut cristallin Effet température Ellipsométrie spectroscopique Epaisseur couche Fonction diélectrique Liaison hydrogène Matériau amorphe hydrogéné Mécanisme croissance Méthode PECVD Propriété interface Propriété optique Silicium 6172Q 6855A 6855J 8115G Si Substrat silicium a-Si:H
- Palabra clave (in)
- Photonic band gap Voids Amorphous thin film Thin films Crystal defects Temperature effects Spectroscopic ellipsometry Layer thickness Dielectric function Hydrogen bonds Amorphous hydrogenated material Growth mechanism PECVD Interface properties Optical properties Silicon
- Palabra clave (es)
- Capa fina amorfa Elipsometría espectroscópica Espesor capa Mecanismo crecimiento Propiedad interfase
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72Q Microscopic defects (voids, inclusions, etc.)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Disciplina
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 24100056
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2010.12.074 
https://dx.doi.org/10.1016/j.tsf.2010.12.074
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