Investigation of optical properties of benzocyclobutene wafer bonding layer used for 3D interconnects via infrared spectroscopic ellipsometry
- Autor
- KAMINENI, Vimal K1 ; SINGH, Pratibha2 3 ; KONG, Laywai1 ; HUDNALL, John3 ; QURESHI, Jamal1 3 ; TAYLOR, Chris3 4 ; RUDACK, Andy3 ; ARKALGUD, Sitaram3 ; DIEBOLD, Alain C1
[1] College of Nanoscale Science and Engineering, University at Albany, Albany, NY 12203, United States
[2] GLOBALFOUNDRIES Inc., Albany, NY 12203, United States
[3] SEMATECH, Albany, NY 12203, United States
[4] Hewlett-Packard Company, Corvallis, OR, United States - Titulo de la conferencia
- 5th International Conference on Spectroscopic Ellipsometry (ICSE-V)
- Nombre de la conferencia
- International Conference on Spectroscopic Ellipsometry (ICSE-V) (ICSE-V) (5 ; Albany, NY 2010-05-23)
- Autor ( monografía)
- TOMPKINS, Harland G (Editor)
- Fuente
Thin solid films. 2011, Vol 519, Num 9, pp 2924-2928, 5 p ; ref : 11 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Campo Científico
- Crystallography; Metallurgy, welding; Condensed state physics
- Editor
- Elsevier, Amsterdam
- País de la publicación
- Netherlands
- Tipo de documento
- Conference Paper
- Idioma
- English
- Palabra clave de autor
- 3D interconnects Benzocyclobutene Curing Infrared spectroscopic ellipsometry Scanning acoustic microscopy Wafer bonding
- Palabra clave (fr)
- Cavité dans réseau Dendrite Défaut cristallin Ellipsométrie spectroscopique Fabrication microélectronique Fixation pastille Microscopie acoustique Microscopie électronique balayage Pastille électronique Propriété diélectrique Propriété optique Silicium Spectre IR Spectre absorption Traitement(durcissement) 6172Q 7866 8540 8540H Si
- Palabra clave (in)
- Voids Dendrites Crystal defects Spectroscopic ellipsometry Microelectronic fabrication Wafer bonding Acoustic microscopy Scanning electron microscopy Wafers Dielectric properties Optical properties Silicon Infrared spectra Absorption spectra Curing
- Palabra clave (es)
- Elipsometría espectroscópica Fabricación microeléctrica
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72Q Microscopic defects (voids, inclusions, etc.)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Disciplina
- Electronics Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 24100070
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2010.11.084 
https://dx.doi.org/10.1016/j.tsf.2010.11.084
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