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Optical characterization of nanocrystals in silicon rich oxide superlattices and porous silicon

Autor
AGOCS, E1 2 ; PETRIK, P1 ; MILITA, S3 ; VANZETTI, L4 ; GARDELIS, S5 ; NASSIOPOULOU, A. G5 ; PUCKER, G4 ; BALBONI, R3 ; FRIED, M1
[1] Research Institute for Technical Physics and Materials Science, 1121 Budapest, Konkoly Thege u. 29-33, Hungary
[2] University of Pannonia, 8200 Veszprem, Egyetem u. 10, Hungary
[3] CNR-IMM Sezione Bologna, Via Gobetti, 40129 Bologna, Italy
[4] Fondazione Bruno Kessler, Via Sommarive 18, 38100 Povo, Trento, Italy
[5] IMEL/NCSR Demokritos, Aghia Paraskevi, 153 10 Athens, Greece
Titulo de la conferencia
5th International Conference on Spectroscopic Ellipsometry (ICSE-V)
Nombre de la conferencia
International Conference on Spectroscopic Ellipsometry (ICSE-V) (ICSE-V) (5 ; Albany, NY 2010-05-23)
Autor ( monografía)
TOMPKINS, Harland G (Editor)
Fuente

Thin solid films. 2011, Vol 519, Num 9, pp 3002-3005, 4 p ; ref : 22 ref

CODEN
THSFAP
ISSN
0040-6090
Campo Científico
Crystallography; Metallurgy, welding; Condensed state physics
Editor
Elsevier, Amsterdam
País de la publicación
Netherlands
Tipo de documento
Conference Paper
Idioma
English
Palabra clave de autor
Effective medium approximation Ellipsometry GCP Generalized critical point MDF Nanocrystal
Palabra clave (fr)
Acide fluorhydrique Anodisation Cavité dans réseau Couche limite Densité courant Diffraction RX Diffusion RX Défaut cristallin Ellipsométrie Ethanol Etude théorique Fonction diélectrique Frittage Microscopie électronique Modèle milieu effectif Modélisation Méthode PECVD Nanocristal Nanomatériau Nanostructure Oxyde de silicium Oxyde de strontium Point critique Polissage électrolytique Propriété interface Préparation échantillon Recuit thermique Semiconducteur poreux Silicium Structure lamellaire Superréseau Séparation phase Température recuit 6110E 6172Q 8107 8115G Intermélangeage Si SiO2
Palabra clave (in)
Hydrofluoric acid Anodizing Voids Boundary layers Current density XRD X-ray scattering Crystal defects Ellipsometry Ethanol Theoretical study Dielectric function Sintering Electron microscopy Effective medium model Modelling PECVD Nanocrystal Nanostructured materials Nanostructures Silicon oxides Strontium oxide Critical points Electropolishing Interface properties Sample preparation Thermal annealing Porous semiconductors Silicon Lamellar structure Superlattices Phase separation Annealing temperature Intermixing
Palabra clave (es)
Modelo medio efectivo Nanocristal Estroncio óxido Propiedad interfase Recocido térmico Estructura lamelar Temperatura recocido
Clasificación
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A10 X-ray diffraction and scattering / 001B60A10E X-ray scattering (including small-angle scattering)

Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72Q Microscopic defects (voids, inclusions, etc.)

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07Z Other topics in nanoscale materials and structures

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)

Disciplina
Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
Procedencia
Inist-CNRS
Base de datos
PASCAL
Identificador INIST
24100087

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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