Multi-Step Word-Line Control Technology in Hierarchical Cell Architecture for Scaled-Down High-Density SRAMs
- Author
- TAKEDA, Koichi1 ; SAITO, Toshio2 ; ASAYAMA, Shinobu3 ; AIMOTO, Yoshiharu2 ; KOBATAKE, Hiroyuki2 ; ITO, Shinya4 ; TAKAHASHI, Toshifumi4 ; NOMURA, Masahiro1 ; TAKEUCHI, Kiyoshi5 ; HAYASHI, Yoshihiro5
[1] LSI Research Laboratory, Renesas Electronics, Kawasaki, Kanagawa 211-8668, Japan
[2] Memory IP Development Department, Renesas Electronics, Kawasaki 211-8668, Japan
[3] Memory IP Development Department, Renesas Electronics, Sagamihara, 252-5298, Japan
[4] Renesas Electronics, Embedded Memory Technology Department, Sagamihara 252-5298, Japan
[5] LSI Research Laboratory, Renesas Electronics, Sagamihara 252-5298, Japan - Conference title
- Special Issue on the 2010 Symposium on VLSI Circuits
- Conference name
- 2010 Symposium on VLSI Circuits (23 ; Honolulu, Hawaii 2010-06-15)
- Author (monograph)
- AMERASEKERA, Ajith (Editor)1 ; NAGATA, Makoto (Editor)2
IEEE Solid-State Circuits Society, Piscataway NJ, United States (Organiser of meeting)
Japan Society of Applied Physics, Japan (Organiser of meeting)
[1] Texas Instruments Incorporated, Dallas, TX, United States
[2] Kobe University, Kobe, Japan - Source
IEEE journal of solid-state circuits. 2011, Vol 46, Num 4, pp 806-814, 9 p ; ref : 13 ref
- CODEN
- IJSCBC
- ISSN
- 0018-9200
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Author keyword
- SRAM scaling Static random access memory (SRAM) static noise margin write margin
- Keyword (fr)
- Alimentation électrique Circuit intégré Densité élevée Domaine temps ns Electronique puissance Miniaturisation Mémoire accès direct statique Méthode multipas Temps accès Temps retard Mémoire accès direct Mémoire non volatile
- Keyword (en)
- Power supply Integrated circuit High density ns range Power electronics Miniaturization Static random access memory Multistep method Access time Delay time Random access memory Non volatile memory
- Keyword (es)
- Alimentación eléctrica Circuito integrado Densidad elevada Electrónica potencia Miniaturización Método multipaso Tiempo acceso Tiempo retardo Memoria acceso directo Memoria no volátil
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03D Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06B Integrated circuits by function (including memories and processors)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D05 Electrical engineering. Electrical power engineering / 001D05H Power electronics, power supplies
- Discipline
- Electrical engineering. Electroenergetics Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 24154046
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/JSSC.2011.2109434 
https://dx.doi.org/10.1109/JSSC.2011.2109434
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