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Modelling of organic magnetoresistance as a function of temperature using the triplet polaron interaction

Author
SIJIE ZHANG1 ; DREW, A. J1 ; KREOUZIS, T1 ; GILLIN, W. P1
[1] Department of Physics, Queen Mary University of London, Mile End Road, London E1 4NS, United Kingdom
Conference title
The 3rd International Meeting on Spins in Organic Semiconductors 2010 (SPINOS III)
Conference name
SPINOS III International Meeting on Spins in Organic Semiconductors 2010 (3 ; Amsterdam 2010-08-30)
Author (monograph)
BOBBERT, Peter (Editor)1
[1] Technische Universiteit Eindhoven, Department of Applied Physics, P.O. Box 513, 5600 MB Eindhoven, Netherlands
Source

Synthetic metals. 2011, Vol 161, Num 7-8, pp 628-631, 4 p ; ref : 21 ref

CODEN
SYMEDZ
ISSN
0379-6779
Scientific domain
Electronics; Condensed state physics; Polymers, paint and wood industries
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Author keyword
Exciton trapping Organic magnetoresistance (OMR) Triplet polaron interaction (TPI)
Keyword (fr)
Complexe d'aluminium Diode électroluminescente organique Effet température Electronique organique Exciton Magnétorésistance Modélisation Polaron Quinoléin-8-ol Semiconducteur organique Dispositif optoélectronique
Keyword (en)
Aluminium complex Organic light emitting diodes Temperature effect Organic electronics Exciton Magnetoresistance Modeling Polaron Organic semiconductors Optoelectronic device
Keyword (es)
Aluminio complejo Efecto temperatura Electrónica orgánica Excitón Magnetoresistencia Modelización Polarón Dispositivo optoelectrónico
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
24162186

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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