Molecular-beam epitaxial growth of Ge/Si nanostructures under low-energy ion irradiation
- Author
- SMAGINA, Zh. V1 ; NOVIKOV, P. L1 ; ZINOVYEV, V. A1 ; ARMBRISTER, V. A1 ; TEYS, S. A1 ; DVURECHENSKII, A. V1
[1] Institute of Semiconductor Physics, SB RAS, Pr. ac. Lavrent'eva, 13, 630090 Novosibirsk, Russian Federation - Conference title
- Proceedings of the 16th International Conference on Molecular Beam Epitaxy (MBE 2010), Berlin, Germany, 22-27 August, 2010
- Conference name
- MBE 2010 International Conference on Molecular Beam Epitaxy (16 ; Berlin 2010-08-22)
- Author (monograph)
- GEELHAAR, Lutz (Editor)1 ; HEYN, Christian (Editor)2 ; WIECK, Andreas D (Editor)3
[1] Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany
[2] University of Hambourg, Germany
[3] University of Bochum, Germany - Source
Journal of crystal growth. 2011, Vol 323, Num 1, pp 244-246, 3 p ; ref : 14 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- Russian
- Author keyword
- A1. Molecular dynamics simulation A1. Quantum dots A3. Ion-beam irradiation A3. Molecular-beam epitaxy
- Keyword (fr)
- Adatome Addition phosphore Dispersion Dynamique moléculaire Effet rayonnement Epitaxie jet moléculaire Etude expérimentale Etude théorique Faisceau ion Germanium Irradiation ion Lacune Mécanisme croissance Méthode Monte Carlo Méthode dynamique moléculaire Nanomatériau Nanopoint Nanostructure Nucléation Point quantique Silicium 6182R 6865 8107 8115H Si Substrat germanium Substrat silicium
- Keyword (en)
- Adatoms Phosphorus additions Dispersions Molecular dynamics Radiation effects Molecular beam epitaxy Experimental study Theoretical study Ion beams Germanium Ion irradiation Vacancies Growth mechanism Monte Carlo methods Molecular dynamics method Nanostructured materials Nanodot Nanostructures Nucleation Quantum dots Silicon
- Keyword (es)
- Dinámica molecular Irradiación ión Mecanismo crecimiento Nanopunto
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A82 Radiation effects on specific materials / 001B60A82R Nanocrystalline materials
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H65 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07Z Other topics in nanoscale materials and structures
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 24310867
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2010.10.128 
https://dx.doi.org/10.1016/j.jcrysgro.2010.10.128
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