Epitaxial growth of non-polar a-plane AlN films by low temperature sputtering using ZnO buffer layers
- Author
- CHEN, Hou-Guang1 ; JIAN, Sheng-Rui1 ; KAO, Hui-Ling2 ; CHEN, Meei-Ru2 ; HUANG, Gou-Zhi1
[1] Department of Materials Science and Engineering, I-Shou University, Kaohsiung 84001, Taiwan, Province of China
[2] Department of Electronic Engineering, Chung Yuan Christian University, Chung-Li 32023, Taiwan, Province of China - Conference title
- 5th International Conference on Technological Advances of Thin Films & Coatings
- Conference name
- Internatinal Conference on Advanced Polymer Matrix Composites (COMPO2010) (COMPO2010) (1 ; Harbin 2010-07-12) = International Conference on Technological Advances of Thin Films & Coatings (ThinFilms2010) (ThinFilms2010) (5 ; Harbin 2010-07-12)
- Author (monograph)
- ZHANG, Sam (Editor)1 ; GOH, Gregory K.L (Editor)2 ; WONG CHEE CHEONG (Editor); ZHONG CHEN (Editor); GUOJUN QI (Editor); LIU, Erjia (Editor)
Thin Films Society, United States (Organiser of meeting)
[1] School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
[2] School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore - Source
Thin solid films. 2011, Vol 519, Num 15, pp 5090-5094, 5 p ; ref : 17 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- AIN Epitaxial growth MOCVD Sputtering ZnO
- Keyword (fr)
- Composé III-V Condition opératoire Couche mince Couche tampon Couche épitaxique Cristallinité Croissance film Diffraction RX Epitaxie Etat surface Microscopie électronique transmission Morphologie surface Mécanisme croissance Méthode MOCVD Nitrure d'aluminium Oxyde d'aluminium Oxyde de zinc Pulvérisation irradiation Réaction dirigée Semiconducteur III-V 6855A 8105E 8115C 8115G Al2O3 AlN Substrat ZnO Substrat saphir ZnO
- Keyword (en)
- III-V compound Operating conditions Thin films Buffer layer Epitaxial layers Crystallinity Film growth XRD Epitaxy Surface states Transmission electron microscopy Surface morphology Growth mechanism MOCVD Aluminium nitride Aluminium oxide Zinc oxide Sputtering Template reaction III-V semiconductors
- Keyword (es)
- Compuesto III-V Condición operatoria Capa tampón Cristalinidad Mecanismo crecimiento Aluminio nitruro Aluminio óxido Zinc óxido Reacción dirigida
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05H Other semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 24346740
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2011.01.149 
https://dx.doi.org/10.1016/j.tsf.2011.01.149
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