Defect reduction in (1 1 2 0) nonpolar a-plane GaN grown on r-plane sapphire using TiN interlayers
- Autor
- XU, S. R1 ; ZHANG, J. C1 ; HAO, Y1 ; YANG, L. A1 ; ZHOU, X. W1 ; CAO, Y. R2 ; ZHANG, J. F1 ; XUE, J. S1 ; LIU, Z. Y1 ; MA, J. C1 ; BAO, F3
[1] Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
[2] School of Electronical & Mechanical Engineering, Xidian University, Xi'an 710071, China
[3] Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China - Fuente
Journal of crystal growth. 2011, Vol 327, Num 1, pp 94-97, 4 p ; ref : 22 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Campo Científico
- Crystallography; Geology; Metallurgy, welding
- Editor
- Elsevier, Amsterdam
- País de la publicación
- Netherlands
- Tipo de documento
- Article
- Idioma
- English
- Palabra clave de autor
- A1. Crystal morphology A3. Metal organic chemical vapor B1. Nitrides B2. Semiconducting III-V materials deposition
- Palabra clave (fr)
- Composé III-V Composé organométallique Couche intermédiaire Couche épitaxique Densité dislocation Diffraction RX Dislocation filetée Défaut empilement Epitaxie Microscopie force atomique Microscopie électronique transmission Morphologie cristalline Méthode MOCVD Nitrure de gallium Nitrure de titane Rugosité Réaction dirigée Semiconducteur III-V 6172L 6172N 8105L 8115G GaN Substrat GaN Substrat métal Substrat saphir Substrat titane
- Palabra clave (in)
- III-V compound Organometallic compounds Interlayers Epitaxial layers Dislocation density XRD Threading dislocation Stacking faults Epitaxy Atomic force microscopy Transmission electron microscopy Crystal morphology MOCVD Gallium nitride Titanium nitride Roughness Template reaction III-V semiconductors
- Palabra clave (es)
- Compuesto III-V Dislocación aterrajada Galio nitruro Titanio nitruro Reacción dirigida
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72L Linear defects: dislocations, disclinations
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72N Stacking faults and other planar or extended defects
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05Z Other materials
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Disciplina
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 24358037
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2011.06.013 
https://dx.doi.org/10.1016/j.jcrysgro.2011.06.013
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