Theory of a novel voltage-sustaining layer for power devices
- Author
- CHEN, X. B1 ; MAWBY, P. A2 ; BOARD, K2 ; SALAMA, C. A. T3
[1] Research Institute of Micro-Electronics, University of Electronic Science and Technology, No. 4, Section 2, North Jianshe Road, Chengdu, 610054 Sichuan, Canada
[2] Department of Electrical Engineering, University of Wales Swansea, Singleton Park, Swansea SA2 8PP, United Kingdom
[3] Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada - Source
Microelectronics journal. 1998, Vol 29, Num 12, pp 1005-1011 ; ref : 12 ref
- ISSN
- 0959-8324
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Couche tampon Dispositif puissance Etude expérimentale Jonction p n Régime commutation Résistance Technologie MOS Tension amorçage
- Keyword (en)
- Buffer layer Power device Experimental study p n junction Switching conditions Resistance MOS technology Breakdown voltage
- Keyword (es)
- Capa tampón Dispositivo potencia Estudio experimental Unión p n Régimen conmutación Resistencia Tecnología MOS Voltaje perforación
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03D Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D05 Electrical engineering. Electrical power engineering / 001D05H Power electronics, power supplies
- Discipline
- Electrical engineering. Electroenergetics Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2438196
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0026-2692(98)00065-2 
https://dx.doi.org/10.1016/S0026-2692(98)00065-2
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