Influence of the substrate platform on the opto-electronic properties of multi-layer organic light-emitting field-effect transistors
- Author
- GENERALI, Gianluca1 ; DINELLI, Franco2 ; CAPELLI, Raffaella1 ; TOFFANIN, Stefano1 ; MUCCINI, Michele1
[1] Consiglio Nazionale delle Ricerche (CNR), Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), via P. Gobetti 101, 40129 Bologna, Italy
[2] Consiglio Nazionale delle Ricerche (CNR), INO U.O.S. 'A. Gozzini' Area della Ricerca di Pisa - S. Cataldo, via Moruzzi 1, 56124 Pisa, Italy - Conference title
- Advanced and emerging light sources
- Conference name
- International Conference on White LEDs and Solid State Lighting (3 ; 2010-07-11) = International Symposium on the Science and Technology of Light Sources (12 ; 2010-07-11)
- Author (monograph)
- HAVERLAG, Marco (Editor)1 ; KROESEN, Gerrit (Editor)2 ; FERGUSON, Ian (Editor)3
[1] Philips Lighting, Eindhoven, Netherlands
[2] Eindhoven University of Technology, Eindhoven, Netherlands
[3] Georgia Institute of Technology, Atlanta, Georgia, United States - Source
Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 22 ; 224018.1-224018.7 ; ref : 14 ref
- CODEN
- JPAPBE
- ISSN
- 0022-3727
- Scientific domain
- Condensed state physics; Physics; Plasma physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Addition étain Caractéristique électrique Complexe d'aluminium Composant actif Couche active Couche mince Dispositif électroluminescent Electronique organique Etude comparative Hétérojonction Microscopie force atomique Microélectronique Mode courant Multicouche Méthacrylate de méthyle polymère Oxyde d'indium Oxyde de silicium Propriété électronique Quinoléin-8-ol Seuil tension Transistor effet champ Verre ITO SiO2
- Keyword (en)
- Tin addition Electrical characteristic Aluminium complex Active component Active layer Thin film Electroluminescent device Organic electronics Comparative study Heterojunction Atomic force microscopy Microelectronics Current mode Multiple layer Methyl methacrylate polymer Indium oxide Silicon oxides Electronic properties Voltage threshold Field effect transistor Glass
- Keyword (es)
- Adición estaño Característica eléctrica Aluminio complejo Componente activo Capa activa Capa fina Dispositivo electroluminiscente Electrónica orgánica Estudio comparativo Heterounión Microscopía fuerza atómica Microelectrónica Modo corriente Capa múltiple Metacrilato de metilo polímero Indio óxido Propiedad electrónica Umbral tensión Transistor efecto campo Vidrio
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 24393320
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0022-3727/44/22/224018 
https://dx.doi.org/10.1088/0022-3727/44/22/224018
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