Through-Oxide-Via-Induced Back-Gate Effect in 3-D Integrated FDSOI Devices
- Author
- AMIT RANJAN TRIVEDI1 ; MUKHOPADHYAY, Saibal1
[1] School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, United States - Source
IEEE electron device letters. 2011, Vol 32, Num 8, pp 1020-1022, 3 p ; ref : 8 ref
- CODEN
- EDLEDZ
- ISSN
- 0741-3106
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- 3-D integration Fully depleted silicon-on-insulator (FDSOI) through-oxide via (TOV)
- Keyword (fr)
- Caractéristique électrique Champ électrique Circuit intégré Couche appauvrissement Courant fuite Empilement Interconnexion Seuil tension Structure 3 dimensions Surtension Technologie silicium sur isolant Transistor Trou interconnexion
- Keyword (en)
- Electrical characteristic Electric field Integrated circuit Depletion layer Leakage current Stacking Interconnection Voltage threshold Three dimensional structure Overvoltage Silicon on insulator technology Transistor Via hole
- Keyword (es)
- Característica eléctrica Campo eléctrico Circuito integrado Capa empobrecimiento Corriente escape Apilamiento Interconexión Umbral tensión Estructura 3 dimensiones Sobrevoltaje Tecnología silicio sobre aislante Transistor Agujero interconexión
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 24415918
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/LED.2011.2156380 
https://dx.doi.org/10.1109/LED.2011.2156380
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