Ex-situ depth-sensing indentation measurements of electrochemically produced Si-Li alloy films
- Author
- HERTZBERG, Benjamin1 ; BENSON, Jim1 ; YUSHIN, Gleb1
[1] School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, United States - Source
Electrochemistry communications. 2011, Vol 13, Num 8, pp 818-821, 4 p ; ref : 19 ref
- ISSN
- 1388-2481
- Scientific domain
- General chemistry, physical chemistry; Energy
- Publisher
- Elsevier, Amsterdam
/
Elsevier, Lausanne
/
Elsevier, New York, NY
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Alloy Anode Hardness Lithium Modulus Silicon
- Keyword (fr)
- Alliage binaire Anode Dureté Indentation Insertion Lithium alliage Matériau électrode Module Young Propriété mécanique Réaction électrochimique Silicium alliage Silicium
- Keyword (en)
- Binary alloy Anode Hardness Indentation Insertion Lithium alloy Electrode material Young modulus Mechanical properties Electrochemical reaction Silicon alloy Silicon
- Keyword (es)
- Aleación binaria Anodo Dureza Indentación Inserción Litio aleación Material electrodo Módulo Young Propiedad mecánica Reacción electroquímica Silicio aleación Silicio
- Classification
- Pascal
- 001 Exact sciences and technology / 001C Chemistry / 001C01 General and physical chemistry / 001C01H Electrochemistry / 001C01H01 General
- Discipline
- General chemistry and physical chemistry
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 24427698
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.elecom.2011.05.011 
https://dx.doi.org/10.1016/j.elecom.2011.05.011
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