The crossover of preferred orientation in heteroepitaxial ZnO/MgO(0 0 1) films

Author

SEO, S. H¹ ; KANG, H. C²
[1] Advanced Materials and Application Research Division, Korea Electrotechnology Research Institute, Changwon 641-120, Korea, Republic of
[2] Department of Advanced Materials Engineering, BK21 Education Center of Mould Technology for Advanced Materials and Parts, College of Engineering, Chosun University, Gwangju 501-759, Korea, Republic of

Conference title

Symposium on Wide Bandgap Semiconductors (III-Nitrides, SiC, and Diamond): Part of the International Union of Materials Research Societies and International Conference on Electronic Materials 2010 (IUMRS&ICEM - Korea 2010)

Conference name

International Union of Materials Research Societies and International Conference on Electronic Materials 2010 (IUMRS&ICEM). Symposium on Wide Bandgap Semiconductors (III-Nitrides, SiC, and Diamond) (IUMRS&ICEM). Symposium on Wide Bandgap Semiconductors (III-Nitrides, SiC, and Diamond) (Seoul 2010-08-22)

Author (monograph)

FREITAS, Jaime A (Editor)¹ ; KIM, Jihyun (Editor)² ; JONG KYU KIM (Editor)³ ; SON, Chang-Sik (Editor)⁴ ; JANG, Soohwan (Editor)⁵ ; KWANG HYEON BAIK (Editor)⁶
International Union of Materials Research Societies (IUMRS), McKeesport, PA 15135, United States (Organiser of meeting)
[1] Naval Research Laboratory, Washington, DC, United States
[2] Korea University, Korea, Republic of
[3] Pohang University of Science and Technology, Korea, Republic of
[4] Silla University, Korea, Republic of
[5] Dankook University, Korea, Republic of
[6] Korea Electronics Technology Institute, Korea, Republic of

Source

Journal of crystal growth. 2011, Vol 326, Num 1, pp 166-170, 5 p ; ref : 22 ref

CODEN

JCRGAE

ISSN

0022-0248

Scientific domain

Crystallography; Geology; Metallurgy, welding

Publisher

Elsevier, Amsterdam

Publication country

Netherlands

Document type

Conference Paper

Language

English

Author keyword

A1. Surface structure A1. X-ray diffraction A3. RF sputtering B1. Zinc compounds B2. Semiconducting II-VI materials

Keyword (fr)

Composé du zinc Couche mince Couche épaisse Diffraction RX Energie déformation Energie surface Epaisseur couche Hétéroépitaxie Microscopie électronique balayage Mécanisme croissance Orientation préférentielle Oxyde de magnésium Oxyde de zinc Propriété mécanique Pulvérisation haute fréquence Semiconducteur II-VI Structure surface 6855J 8110A MgO Substrat MgO ZnO

Keyword (en)

Zinc compounds Thin films Thick films XRD Strain energy Surface energy Layer thickness Heteroepitaxy Scanning electron microscopy Growth mechanism Preferred orientation Magnesium oxide Zinc oxide Mechanical properties Radiofrequency sputtering II-VI semiconductors Surface structure

Keyword (es)

Energía deformación Espesor capa Heteroepitaxia Mecanismo crecimiento Orientación preferencial Magnesio óxido Zinc óxido Pulverización alta frecuencia

Classification

Pascal

001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness

Pascal

001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation

Discipline

Physics and materials science Physics of condensed state : structure, mechanical and thermal properties

Origin

Inist-CNRS

Database

PASCAL

INIST identifier

24442248

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS