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Modeling of III-nitride Light-Emitting Diodes: Progress, Problems, and Perspectives

Author
KARPOV, Sergey Yu1
[1] STR Group ― Soft-Impact, Ltd., P.O. Box 83, 27 Engels ave., St.Petersburg, 194156, Russian Federation
Conference title
Gallium nitride materials and devices VI (24-27 January 2011, San Francisco, California, United States)
Conference name
Gallium nitride materials and devices (06 ; San Francisco CA 2011)
Author (monograph)
Chyi, Jen-Inn (Editor)
SPIE, United States (Organiser of meeting)
Source

Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7939 ; 79391C.1-79391C.12 ; ref : 49 ref

CODEN
PSISDG
ISSN
0277-786X
ISBN
978-0-8194-8476-5
Scientific domain
Crystallography; Electronics; Optics; Condensed state physics; Physics
Publisher
SPIE, Bellingham WA
Publication country
United States
Document type
Conference Paper
Language
Russian
Keyword (fr)
Composé ternaire Courant intense Diode électroluminescente Dopage Emission optique Evaluation performance Hétérostructure Lampe LED Lumière blanche Modélisation Nitrure d'indium Nitrure de gallium Rendement quantique Régime hors équilibre Région active 4272 InGaN Composé III-V
Keyword (en)
Ternary compound High strength current Light emitting diode Doping Light emission Performance evaluation Heterostructures LED lamps White light Modeling Indium nitride Gallium nitride Quantum yield Non equilibrium conditions Active region III-V compound
Keyword (es)
Compuesto ternario Corriente intensa Diodo electroluminescente Doping Emisión óptica Evaluación prestación Luz blanca Modelización Indio nitruro Galio nitruro Rendimiento quántico Régimen fuera equilibrio Región activa Compuesto III-V
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B72 Optical sources and standards

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices

Discipline
Electronics Physics : optics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
24455578

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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