The NIST EUV facility for advanced photoresist qualification using the witness-sample test
- Author
- GRANTHAM, S1 ; TARRIO, C1 ; STEINHOFF, J2 ; HILL, S. B1 ; RICHTER, L. J; LUCATORTO, T. B1 ; VAN DIJK, J2 ; KAYA, C2 ; HARNED, N3 ; HOEFNAGELS, R2 ; SILOVA, M2
[1] National Institute of Standards and Technology (NIST), 100 Bureau Drive, Gaithersburg, MD 20899-8410, United States
[2] ASML, De Run 6501, 5504 DR, Veldhoven, Netherlands
[3] ASML, 277 Danbury Road, Wilton, CT 06897, United States - Conference title
- Extreme ultraviolet (EUV) lithography II (28 February - 3 March 2011, San Jose CA US)
- Conference name
- Extreme ultraviolet lithography (02 ; San Jose CA 2011)
- Author (monograph)
- La Fontaine, Bruno M (Editor); Naulleau, Patrick P (Editor)
SPIE, United States (Organiser of meeting) - Source
Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7969 ; 79690K.1-79690K.8 ; 2 ; ref : 8 ref
- CODEN
- PSISDG
- ISSN
- 0277-786X
- ISBN
- 978-0-8194-8528-1
- Scientific domain
- Electronics; Optics; Physics
- Publisher
- SPIE, Bellingham, Wash
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Etude comparative Fabrication microélectronique Matériau revêtu Pastille électronique Photolithographie Photorésist Rayonnement UV extrême Rayonnement UV Rayonnement synchrotron Résist Scanneur
- Keyword (en)
- Comparative study Microelectronic fabrication Coated material Wafer Photolithography Photoresist Vacuum ultraviolet radiation Ultraviolet radiation Synchrotron radiation Resist Scanner
- Keyword (es)
- Estudio comparativo Fabricación microeléctrica Material revestido Pastilla electrónica Fotolitografía Fotorresistencia Radiación ultravioleta extrema Radiación ultravioleta Radiación sincrotrón Resistencia Escáner
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F16 Imaging devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 24489526
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1117/12.879519 
https://dx.doi.org/10.1117/12.879519
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1117\/12.879519\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:90:\"The NIST EUV facility for advanced photoresist qualification using the witness-sample test\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2011\";s:9:\"\u0000*\u0000volume\";s:4:\"7969\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:17:\"79690K.1-79690K.8\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"GRANTHAM\";s:10:\"\u0000*\u0000aufirst\";s:1:\"S\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:9:\"TARRIO, C\";i:1;s:12:\"STEINHOFF, J\";i:2;s:10:\"HILL, S. B\";i:3;s:13:\"RICHTER, L. J\";i:4;s:15:\"LUCATORTO, T. B\";i:5;s:11:\"VAN DIJK, J\";i:6;s:7:\"KAYA, C\";i:7;s:9:\"HARNED, N\";i:8;s:13:\"HOEFNAGELS, R\";i:9;s:9:\"SILOVA, M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:17:\"978-0-8194-8528-1\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"2\";s:9:\"\u0000*\u0000btitle\";s:85:\"Extreme ultraviolet (EUV) lithography II (28 February - 3 March 2011, San Jose CA US)\";s:8:\"\u0000*\u0000title\";s:90:\"The NIST EUV facility for advanced photoresist qualification using the witness-sample test\";s:8:\"\u0000*\u0000place\";s:16:\"Bellingham, Wash\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1117\/12.879519\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:90:\"The NIST EUV facility for advanced photoresist qualification using the witness-sample test\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2011\";s:9:\"\u0000*\u0000volume\";s:4:\"7969\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:17:\"79690K.1-79690K.8\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"GRANTHAM\";s:10:\"\u0000*\u0000aufirst\";s:1:\"S\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:9:\"TARRIO, C\";i:1;s:12:\"STEINHOFF, J\";i:2;s:10:\"HILL, S. B\";i:3;s:13:\"RICHTER, L. J\";i:4;s:15:\"LUCATORTO, T. B\";i:5;s:11:\"VAN DIJK, J\";i:6;s:7:\"KAYA, C\";i:7;s:9:\"HARNED, N\";i:8;s:13:\"HOEFNAGELS, R\";i:9;s:9:\"SILOVA, M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:17:\"978-0-8194-8528-1\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"2\";s:9:\"\u0000*\u0000btitle\";s:85:\"Extreme ultraviolet (EUV) lithography II (28 February - 3 March 2011, San Jose CA US)\";s:8:\"\u0000*\u0000title\";s:90:\"The NIST EUV facility for advanced photoresist qualification using the witness-sample test\";s:8:\"\u0000*\u0000place\";s:16:\"Bellingham, Wash\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:17:\"10.1117\/12.879519\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1117\/12.879519\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:90:\"The NIST EUV facility for advanced photoresist qualification using the witness-sample test\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2011\";s:9:\"\u0000*\u0000volume\";s:4:\"7969\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:17:\"79690K.1-79690K.8\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"GRANTHAM\";s:10:\"\u0000*\u0000aufirst\";s:1:\"S\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:9:\"TARRIO, C\";i:1;s:12:\"STEINHOFF, J\";i:2;s:10:\"HILL, S. B\";i:3;s:13:\"RICHTER, L. J\";i:4;s:15:\"LUCATORTO, T. B\";i:5;s:11:\"VAN DIJK, J\";i:6;s:7:\"KAYA, C\";i:7;s:9:\"HARNED, N\";i:8;s:13:\"HOEFNAGELS, R\";i:9;s:9:\"SILOVA, M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:17:\"978-0-8194-8528-1\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"2\";s:9:\"\u0000*\u0000btitle\";s:85:\"Extreme ultraviolet (EUV) lithography II (28 February - 3 March 2011, San Jose CA US)\";s:8:\"\u0000*\u0000title\";s:90:\"The NIST EUV facility for advanced photoresist qualification using the witness-sample test\";s:8:\"\u0000*\u0000place\";s:16:\"Bellingham, Wash\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1117\/12.879519\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:90:\"The NIST EUV facility for advanced photoresist qualification using the witness-sample test\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2011\";s:9:\"\u0000*\u0000volume\";s:4:\"7969\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:17:\"79690K.1-79690K.8\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"GRANTHAM\";s:10:\"\u0000*\u0000aufirst\";s:1:\"S\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:9:\"TARRIO, C\";i:1;s:12:\"STEINHOFF, J\";i:2;s:10:\"HILL, S. B\";i:3;s:13:\"RICHTER, L. J\";i:4;s:15:\"LUCATORTO, T. B\";i:5;s:11:\"VAN DIJK, J\";i:6;s:7:\"KAYA, C\";i:7;s:9:\"HARNED, N\";i:8;s:13:\"HOEFNAGELS, R\";i:9;s:9:\"SILOVA, M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:17:\"978-0-8194-8528-1\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"2\";s:9:\"\u0000*\u0000btitle\";s:85:\"Extreme ultraviolet (EUV) lithography II (28 February - 3 March 2011, San Jose CA US)\";s:8:\"\u0000*\u0000title\";s:90:\"The NIST EUV facility for advanced photoresist qualification using the witness-sample test\";s:8:\"\u0000*\u0000place\";s:16:\"Bellingham, Wash\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:17:\"10.1117\/12.879519\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:90:\"The NIST EUV facility for advanced photoresist qualification using the witness-sample test\";s:9:\"\u0000*\u0000jtitle\";s:70:\"Proceedings of SPIE, the International Society for Optical Engineering\";s:9:\"\u0000*\u0000stitle\";s:29:\"Proc. SPIE Int. Soc. Opt. Eng\";s:7:\"\u0000*\u0000date\";s:4:\"2011\";s:9:\"\u0000*\u0000volume\";s:4:\"7969\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:0:\"\";s:8:\"\u0000*\u0000epage\";s:0:\"\";s:8:\"\u0000*\u0000pages\";s:17:\"79690K.1-79690K.8\";s:7:\"\u0000*\u0000issn\";s:9:\"0277-786X\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:8:\"GRANTHAM\";s:10:\"\u0000*\u0000aufirst\";s:1:\"S\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:9:\"TARRIO, C\";i:1;s:12:\"STEINHOFF, J\";i:2;s:10:\"HILL, S. B\";i:3;s:13:\"RICHTER, L. J\";i:4;s:15:\"LUCATORTO, T. B\";i:5;s:11:\"VAN DIJK, J\";i:6;s:7:\"KAYA, C\";i:7;s:9:\"HARNED, N\";i:8;s:13:\"HOEFNAGELS, R\";i:9;s:9:\"SILOVA, M\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:17:\"978-0-8194-8528-1\";s:8:\"\u0000*\u0000coden\";s:6:\"PSISDG\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:1:\"2\";s:9:\"\u0000*\u0000btitle\";s:85:\"Extreme ultraviolet (EUV) lithography II (28 February - 3 March 2011, San Jose CA US)\";s:8:\"\u0000*\u0000title\";s:90:\"The NIST EUV facility for advanced photoresist qualification using the witness-sample test\";s:8:\"\u0000*\u0000place\";s:16:\"Bellingham, Wash\";s:6:\"\u0000*\u0000pub\";s:4:\"SPIE\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
