Interaction of benzene and toluene vapors with Ru(0001) surface: Relevance to MLM contamination
- Author
- YAKSHINSKIY, B. V1 ; SHEN, Q1 ; BARTYNSKI, R. A1
[1] Dept. of Physics and Astronomy, and Laboratory for Surface Modification, Rutgers, The State University of New Jersey, Piscataway NJ 08854, United States - Conference title
- Extreme ultraviolet (EUV) lithography II (28 February - 3 March 2011, San Jose CA US)
- Conference name
- Extreme ultraviolet lithography (02 ; San Jose CA 2011)
- Author (monograph)
- La Fontaine, Bruno M (Editor); Naulleau, Patrick P (Editor)
SPIE, United States (Organiser of meeting) - Source
Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 7969 ; 796922.1-796922.10 ; 2 ; ref : 25 ref
- CODEN
- PSISDG
- ISSN
- 0277-786X
- ISBN
- 978-0-8194-8528-1
- Scientific domain
- Electronics; Optics; Physics
- Publisher
- SPIE, Bellingham, Wash
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Bicouche Contamination superficielle Diffraction électron Diffusion ion Décharge électrostatique Désorption stimulée électron Détérioration par rayonnement Electronique faible puissance Energie liaison Fabrication microélectronique Flux électrons Graphène Lithographie UV Microscopie tunnel balayage Multicouche Photolithographie Pyrolyse Rayonnement UV extrême Revêtement Source électron Spectre photoélectron RX Taux croissance Semiconducteur bande interdite nulle
- Keyword (en)
- Bilayers Surface contamination Electron diffraction Ion scattering Electrostatic discharge Electron stimulated desorption Radiation damage Low-power electronics Binding energy Microelectronic fabrication Electron flux Graphene UV lithography Scanning tunneling microscopy Multiple layer Photolithography Pyrolysis Vacuum ultraviolet radiation Coatings Electron sources X-ray photoelectron spectra Growth rate Zero band gap semiconductors
- Keyword (es)
- Difracción electrónica Difusión ión Deteriorización por irradiación Energía enlace Fabricación microeléctrica Flujo electrones Graphene Litografía UV Microscopía túnel barrido Capa múltiple Fotolitografía Pirólisis Radiación ultravioleta extrema Revestimiento Tasa crecimiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 24489577
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1117/12.879297 
https://dx.doi.org/10.1117/12.879297
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