Influence of substrate temperature, growth rate and TCO substrate on the properties of CSS deposited CdS thin films
- Author
- SCHAFFNER, J1 ; FELDMEIER, E1 ; SWIRSCHUK, A1 ; SCHIMPER, H.-J1 ; KLEIN, A1 ; JAEGERMANN, W1
[1] Surface Science Division, Department of Materials Science, Darmstadt University of Technology, Petersenstr. 32, 64287 Darmstadt, Germany - Conference title
- Proceedings of the EMRS 2010 Spring Meeting Symposium M: Thin Film Chalcogenide Photovoltaic Materials Strasbourg, France
- Conference name
- EMRS Spring Meeting Symposium M: Thin Film Chalcogenide Photovoltaic Materials (10 ; Strasbourg 2010-06-07)
- Author (monograph)
- ROMEO, Alessandro (Editor); SCHEER, Roland (Editor); GUILLEMOLEs, Jean François (Editor); YAMADA, Akira (Editor); ABOU-RAS, Daniel (Editor)
the European Materials Research Society E-MRS, Europe (Organiser of meeting) - Source
Thin solid films. 2011, Vol 519, Num 21, pp 7556-7559, 4 p ; ref : 9 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- AFM CSS CdS CdTe solar cell Film growth SEM XRD
- Keyword (fr)
- Addition fluor Addition étain Cellule solaire Condition opératoire Couche mince Cristal hexagonal Croissance film Diffraction RX Dépôt phase vapeur Microscopie force atomique Microscopie électronique balayage Microstructure Morphologie Mécanisme croissance Propriété surface Semiconducteur II-VI Spectre photoélectron RX Spectrométrie photoélectron Structure cristalline Sulfure de cadmium Système vide Taux croissance Tellurure de cadmium Texture Ultravide Vitesse dépôt 6855A 6855J 8105D 8115K CdS CdTe
- Keyword (en)
- Fluorine additions Tin additions Solar cells Operating conditions Thin films Hexagonal crystals Film growth XRD Vapor deposition Atomic force microscopy Scanning electron microscopy Microstructure Morphology Growth mechanism Surface properties II-VI semiconductors X-ray photoelectron spectra Photoelectron spectroscopy Crystal structure Cadmium sulfide Vacuum systems Growth rate Cadmium tellurides Texture Ultrahigh vacuum Deposition rate
- Keyword (es)
- Condición operatoria Cristal hexagonal Mecanismo crecimiento Cadmio sulfuro Velocidad deposición
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05H Other semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 24536648
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2010.12.181 
https://dx.doi.org/10.1016/j.tsf.2010.12.181
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