High Current Density Esaki Tunnel Diodes Based on GaSb-InAsSb Heterostructure Nanowires
- Author
- GANJIPOUR, Bahram1 ; DEY, Anil W2 ; MATTIAS BORG, B1 ; EK, Martin3 ; PISTOL, Mats-Erik1 ; DICK, Kimberly A1 3 ; WERNERSSON, Lars-Erik2 ; THELANDER, Claes1
[1] Solid State Physics, Lund University, Box 118, 221 00, Lund, Sweden
[2] Department of Electrical- and Information Technology, Lund University, Box 118, 221 00, Lund, Sweden
[3] Polymer and Materials Chemistry, Lund University, Box 124, 221 00 Lund, Sweden - Source
Nano letters (Print). 2011, Vol 11, Num 10, pp 4222-4226, 5 p ; ref : 24 ref
- Publisher
- American Chemical Society, Washington, DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Antimoniure de gallium Composé III-V Densité courant Densité élevée Diode tunnel Dopage Electrode commande Hétérojonction Hétérostructure Jonction p n Nanofil Nanomatériau Phosphure de gallium Porte logique Propriété électrique Propriété électronique Semiconducteur III-V Tellurure de gallium Transistor 7321 8107B 8107V 8535 GaP GaSb InAsSb Substrat GaSb
- Keyword (en)
- Gallium antimonides III-V compound Current density High density Tunnel diodes Doping Gates Heterojunctions Heterostructures p n junctions Nanowires Nanostructured materials Gallium phosphide Logic gates Electrical properties Electronic properties III-V semiconductors Gallium tellurides Transistors
- Keyword (es)
- Compuesto III-V Densidad elevada Doping Galio fosfuro Propiedad electrónica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C21 Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07B Nanocrystalline materials
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07V Quantum wires
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics
- Discipline
- Electronics Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 24606490
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1021/nl202180b 
https://dx.doi.org/10.1021/nl202180b
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