Silicon Nanotube Field Effect Transistor with Core—Shell Gate Stacks for Enhanced High-Performance Operation and Area Scaling Benefits
- Author
- FAHAD, Hossain M1 ; SMITH, Casey E1 ; ROJAS, Jhonathan P1 ; HUSSAIN, Muhammad M1
[1] Integrated Nanotechnology Lab, Electrical Engineering, Division of Physical Science and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia - Source
Nano letters (Print). 2011, Vol 11, Num 10, pp 4393-4399, 7 p ; ref : 15 ref
- Publisher
- American Chemical Society, Washington, DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Canal court Densité porteur charge Densité élevée Dispositif nanotube Electrode commande Loi échelle Nanofil Nanomatériau Porte logique Porteur minoritaire Semiconducteur Silicium Structure coeur couche Tellurure de gallium Transistor MOSFET Transistor effet champ Transport balistique Transport quantique 8107B 8107V 8530T 8535K Si
- Keyword (en)
- Short channel Charge carrier density High density Nanotube devices Gates Scaling law Nanowires Nanostructured materials Logic gate Minority carrier Semiconductor materials Silicon Core shell structure Gallium tellurides MOSFET Field effect transistor Ballistic transport Quantum transport
- Keyword (es)
- Canal corto Concentración portador carga Densidad elevada Ley escala Puerta lógica Portador minoritario Semiconductor(material) Silicio Estructura núcleo cascarón Transistor efecto campo Transporte balístico Transporte cuántico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07B Nanocrystalline materials
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07V Quantum wires
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics
- Discipline
- Electronics Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 24606522
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1021/nl202563s 
https://dx.doi.org/10.1021/nl202563s
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