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Conformality and composition of films deposited at low pressures

Author
CALE, T. S1
[1] Center for Solid State Electronics, Arizona State University, Tempe, AZ 85T287-6206, United States
Source

Chemical engineering communications (Print). 1996, Vol 152-53, pp 261-273 ; ref : 27 ref

CODEN
CEGCAK
ISSN
0098-6445
Scientific domain
Chemical engineering
Publisher
Taylor & Francis, Elmont, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Alliage binaire Basse pression Cinétique Composition chimique Composé binaire Croissance cristalline en phase vapeur Dépôt chimique phase vapeur Dépôt physique phase vapeur Etude théorique Film Modèle Phénomène transport Réaction chimique Silicium oxyde Technologie tranche Titane alliage Tungstène alliage Alliage TiW O Si SiO2 Ti W Composé minéral Métal transition alliage
Keyword (en)
Binary alloys Low pressure Kinetics Chemical composition Binary compounds Crystal growth from vapors CVD Physical vapor deposition Theoretical study Films Models Transport processes Chemical reactions Silicon oxides Trench technology Titanium alloys Tungsten alloys Inorganic compounds Transition element alloys
Keyword (es)
Modelo Tecnología trinchera
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D11 Metals. Metallurgy

Pacs
8110A Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation

Pacs
8115 Methods of deposition of films and coatings; film growth and epitaxy

Discipline
Metals. Metallurgy Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
2471983

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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