Influence of source/drain formation process on resistance and effective mobility for scaled multi-channel MOSFET
- Author
- TACHI, Kiichi1 ; VULLIET, Nathalie2 ; BARRAUD, Sylvain1 ; KAKUSHIMA, Kuniyuki4 ; IWAI, Hiroshi4 ; CRISTOLOVEANU, Sorin3 ; ERNST, Thomas1
[1] CEA-LETI, MINATEC Campus, 17 Avenue Des Martyrs, 38054 Grenoble, France
[2] STMicroelectronics, 850 Rue J. Monnet, 38926 Crolles, France
[3] Frontier Research Center, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
[4] IMEP-LAHC, INPG-MINATEC, 3 Parvis Louis Neel, 38016 Grenoble, France - Conference title
- Selected Papers from the ESSDERC 2010 Conference
- Conference name
- European Solid-State Device Research Conference (ESSDERC) (ESSDERC) (40 ; Seville 2010-09-14)
- Author (monograph)
- GAMIZ, Francisco (Editor)1 ; GODOY, Andres (Editor)1
[1] Departments of Electronics, Nanoelectronics Group, University of Granada, Campus Universitario, Fuentenueva, 18071 Granada, Spain - Source
Solid-state electronics. 2011, Vol 65-66, pp 16-21, 6 p ; ref : 17 ref
- ISSN
- 0038-1101
- Scientific domain
- Electronics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Conference Paper
- Language
- English
- Author keyword
- (MCFETs) 3-D structure In situ doping Mobility Multi-channel field-effect transistors SOI Selective epitaxial growth (SEG) Source/drain resistance
- Keyword (fr)
- Alignement vertical Caractéristique électrique Court circuit Croissance sélective Diffusion Coulomb Dopage Drain Epitaxie Fabrication microélectronique Implantation ion In situ Matériau dopé Modèle 3 dimensions Optimisation Recuit Résistance série Technologie silicium sur isolant Transistor MOSFET Transistor effet champ
- Keyword (en)
- Vertical alignment Electrical characteristic Short circuit Selective growth Coulomb scattering Doping Drain Epitaxy Microelectronic fabrication Ion implantation In situ Doped materials Three dimensional model Optimization Annealing Series resistance Silicon on insulator technology MOSFET Field effect transistor
- Keyword (es)
- Alineacíon vertical Característica eléctrica Cortocircuito Difusión Coulomb Doping Dren Epitaxia Fabricación microeléctrica Implantación ión In situ Modelo 3 dimensiones Optimización Recocido Resistencia en serie Tecnología silicio sobre aislante Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 24747091
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.sse.2011.06.032 
https://dx.doi.org/10.1016/j.sse.2011.06.032
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