Multi-Subband Ensemble Monte Carlo simulation of bulk MOSFETs for the 32 nm-node and beyond
- Author
- SAMPEDRO, C1 ; GAMIZ, F1 ; GODOY, A1 ; VALIN, R2 ; GARCIA-LOUREIRO, A2 ; RODRIGUEZ, N1 ; TIENDA-LUNA, I. M1 ; MARTINEZ-CARRICONDO, F1 ; BIEL, B1
[1] Nanoelectronics Research Group, Departamento de Electrónica, Universidad de Granada, Campus Fuentenueva S/N, 18071 Granada, Spain
[2] Departamento de Electrónica y Computación, Universidad de Santiago de Compostela, Santiago de Compostela, Spain - Conference title
- Selected Papers from the ESSDERC 2010 Conference
- Conference name
- European Solid-State Device Research Conference (ESSDERC) (ESSDERC) (40 ; Seville 2010-09-14)
- Author (monograph)
- GAMIZ, Francisco (Editor)1 ; GODOY, Andres (Editor)1
[1] Departments of Electronics, Nanoelectronics Group, University of Granada, Campus Universitario, Fuentenueva, 18071 Granada, Spain - Source
Solid-state electronics. 2011, Vol 65-66, pp 88-93, 6 p ; ref : 28 ref
- ISSN
- 0038-1101
- Scientific domain
- Electronics
- Publisher
- Elsevier, Kidlington
- Publication country
- United Kingdom
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Bulk nMOSFET Ensemble Monte Carlo Multi-Subband Nanodevices SGSOI
- Keyword (fr)
- Codage Effet quantique Méthode Monte Carlo Nanoélectronique Production masse Puits quantique Simulateur Simulation numérique Sous bande Technologie NMOS Technologie silicium sur isolant Transistor MOSFET 8107S
- Keyword (en)
- Coding Quantum effect Monte Carlo method Nanoelectronics Mass production Quantum well Simulator Numerical simulation Subband NMOS technology Silicon on insulator technology MOSFET
- Keyword (es)
- Codificación Efecto cuántico Método Monte Carlo Nanoelectrónica Producción en masa Pozo cuántico Simulador Simulación numérica Subbanda Tecnología NMOS Tecnología silicio sobre aislante
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07S Quantum wells
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics
- Discipline
- Electronics Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 24747102
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.sse.2011.06.036 
https://dx.doi.org/10.1016/j.sse.2011.06.036
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