Continuous-time observation of pseudo-vacancy diffusion at Si(111)-7 x 7 surfaces
- Author
- HWANG, I.-S1 ; LO, R.-L1 ; TSONG, T. T1
[1] Institute of Physics, Academia Sinica, Nankang, Taipei, Taiwan, Province of China - Source
Surface science. 1996, Vol 367, Num 2, pp L47-L53 ; ref : 21 ref
- Publisher
- Elsevier Science, Amsterdam
/
Elsevier Science, Lausanne
/
Elsevier Science, New York, NY
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Diffusion superficielle Défaut ponctuel Défaut surface Etude expérimentale Matériau semiconducteur Migration STM Silicium Si
- Keyword (en)
- Surface diffusion Point defects Surface defect Experimental study Semiconductor materials Migration STM Silicon
- Keyword (es)
- Difusión superficial Defecto superficie
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35D Composition; defects and impurities
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35F Diffusion; interface formation
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2475410
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0039-6028(96)00991-0 
https://dx.doi.org/10.1016/S0039-6028(96)00991-0
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