An Adjusted Constant-Current Method to Determine Saturated and Linear Mode Threshold Voltage of MOSFETs
- Author
- BAZIGOS, Antonios1 ; BUCHER, Matthias2 ; ASSENMACHER, Joachim3 ; DECKER, Stefan3 ; GRABINSKI, Wladyslaw4 ; PAPANANOS, Yannis1
[1] Department of Electrical and Computer Engineering, National Technical University of Athens, 15780 Athens, Greece
[2] Department of Electronic and Computer Engineering, Technical University of Crete, 73100 Chania, Greece
[3] Infineon Technologies AG, 81730 Munich, Germany
[4] GMC, 1291 Commugny, Switzerland - Source
I.E.E.E. transactions on electron devices. 2011, Vol 58, Num 11, pp 3751-3758, 8 p ; ref : 28 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Charge-based model metal-oxide-semiconductor field-effect transistor (MOSFET) compact model moderate inversion parameter determination pocket implant threshold voltage
- Keyword (fr)
- Conception assistée Conception circuit Conception compacte Etude comparative Potentiel surface Seuil tension Technologie MOS complémentaire Transistor MOS Transistor MOSFET Effet DIBL
- Keyword (en)
- Computer aided design Circuit design Compact design Comparative study Surface potential Voltage threshold Complementary MOS technology MOS transistor MOSFET DIBL effect
- Keyword (es)
- Concepción asistida Diseño circuito Concepción compacta Estudio comparativo Potencial superficie Umbral tensión Tecnología MOS complementario Transistor MOS
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 24776154
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2011.2164080 
https://dx.doi.org/10.1109/TED.2011.2164080
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