Modulation Effect of Lead Zirconate Titanate for Zinc Oxide Channel Resistance in Ferroelectric Field Effect Transistor
- Author
- ZE JIA1 ; ZHANG, Ming-Ming1 ; REN, Tian-Ling1
[1] Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing, China - Conference title
- Proceedings of the Tenth European Conference on Applications of Polar Dielectrics (ECAPD-10). Part III of IV
- Conference name
- European Conference on Applications of Polar Dielectrics (ECAPD-10) (ECAPD-10) (10 ; Edinburgh, Scotland 2010-08-09)
- Author (monograph)
- DUNN, Steve (Editor)1 ; DOREY, Robert (Editor)2
[1] Queen Mary, University of London, United Kingdom
[2] Cranfield University, United Kingdom - Source
Ferroelectrics (Print). 2011, Vol 421, pp 92-97, 6 p ; ref : 6 ref
- CODEN
- FEROA8
- ISSN
- 0015-0193
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Taylor & Francis, Colchester
- Publication country
- United Kingdom
- Document type
- Conference Paper
- Language
- English
- Author keyword
- FeFET ZnO channel resistance modulation effect
- Keyword (fr)
- Addition aluminium Capacité électrique Dopage Fabrication Ferroélectrique Hystérésis ferroélectrique Modulation Niveau Fermi Oxyde de zinc PZT Procédé sol gel Transistor effet champ
- Keyword (en)
- Aluminium addition Capacitance Doping Manufacturing Ferroelectric materials Ferroelectric hysteresis Modulation Fermi level Zinc oxide PZT Sol gel process Field effect transistor
- Keyword (es)
- Adicion aluminio Capacitancia Doping Fabricación Material ferroeléctrico Histéresis ferroeléctrica Modulación Nivel Fermi Zinc óxido Procedimiento sol gel Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 24784774
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1080/00150193.2011.594734 
https://dx.doi.org/10.1080/00150193.2011.594734
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