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Broadband antireflection of silicon nanorod arrays prepared by plasma enhanced chemical vapor deposition

Author
DESHENG WANG1 ; ZHIBO YANG1 ; FEI LI1 ; DEQUAN LIU1 ; PENG WANG1 ; DEYAN HE1
[1] Department of Physics, Lanzhou University, Lanzhou 730000, China
Source

Applied surface science. 2011, Vol 258, Num 3, pp 1058-1061, 4 p ; ref : 21 ref

ISSN
0169-4332
Scientific domain
General chemistry, physical chemistry; Crystallography; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
Antireflection Electrodeposition Si nanorods VHF-PECVD
Keyword (fr)
Croissance film Dépôt électrolytique Méthode PECVD Nanobâtonnet Nanomatériau Réseau(arrangement) Silicium Si
Keyword (en)
Film growth Electrodeposition PECVD Nanorod Nanostructured materials Arrays Silicon
Keyword (es)
Nanopalito
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology

Discipline
Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
24785905

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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