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Polarization-dependent refractive-index change induced by superlattice disordering

Author
SUZUKI, Y1 ; IWAMURA, H1 ; MIYAZAWA, T1 ; WAKATSUKI, A1 ; MIKAMI, O1
[1] NTT Opto-electronics Laboratories, Atsugi-Shi, Kanagawa Pref., Japan
Source

IEEE journal of quantum electronics. 1996, Vol 32, Num 11, pp 1922-1931 ; ref : 24 ref

CODEN
IEJQA7
ISSN
0018-9197
Scientific domain
Electronics; Optics; Telecommunications
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Aluminium arséniure Application Circuit intégré Circuit optique Composé binaire Composé ternaire Diffusion mutuelle Diffusion(transport) Désordre Epaisseur Etude expérimentale Etude théorique Gallium arséniure Indice réfraction Indium arséniure Indium phosphure Matériau semiconducteur Polarisation Superréseau Al As AlAs As Ga In As Ga GaAs In P InGaAs InP Composé minéral
Keyword (en)
Aluminium arsenides Application Integrated circuits Optical circuit Binary compounds Ternary compounds Interdiffusion Diffusion Disorder Thickness Experimental study Theoretical study Gallium arsenides Refractive index Indium arsenides Indium phosphides Semiconductor materials Polarization Superlattices Inorganic compounds
Keyword (es)
Aplicación Circuito óptico Difusión mútua Desorden
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films / 001B70H66F Iii-v semiconductors

Pacs
7866F III-V semiconductors

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
2484321

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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