The atomic structure of the Si(111) (2√3 X 2√3) R30°-Sn reconstruction
- Author
- LEVERMANN, A. H1 ; HOWES, P. B1 ; JOHNSON, R. L3 ; EDWARDS, K. A1 ; ANYELE, H. T1 ; MATTHAI, C. C1 ; MACDONALD, J. E1 ; FEIDENHANS, R2 ; LOTTERMOSER, L3 ; SEEHOFER, L3 ; FALKENBERG, G3
[1] Department of Physics, University of Wales, Cardiff, P.O. Box 913, Cardiff CF2 3YB, United Kingdom
[2] Risø National Laboratory, 4000 Roskilde, Denmark
[3] Universität Hamburg, 2. Institut für Experimentalphysik, Luruper Chaussee 149, 22761 Hamburg, Germany - Conference title
- ICFSI-5 : International Conference on the Formation of Semiconductor Interfaces
- Conference name
- ICFSI-5 : International Conference on the Formation of Semiconductor Interfaces (5 ; Princeton, NJ 1995-06-26)
- Author (monograph)
- KAHN, A (Editor)1 ; LUDEKE, R (Editor)2
[1] Princeton University, Princeton, NJ, United States
[2] IBM T.J. Watson Research Center, Yorktown Heights, NY, United States - Source
Applied surface science. 1996, Vol 104-05, pp 124-129 ; ref : 12 ref
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Adsorption Etain Etude expérimentale Matériau semiconducteur Reconstruction surface STM Silicium Structure atomique XRD Si Sn
- Keyword (en)
- Adsorption Tin Experimental study Semiconductor materials Surface reconstruction STM Silicon Atomic structure XRD
- Keyword (es)
- Estructura atómica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35B Surface structure and topography
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2489703
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1016/S0169-4332(96)00132-8 
https://dx.doi.org/10.1016/S0169-4332(96)00132-8
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0169-4332(96)00132-8\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:75:\"The atomic structure of the Si(111) (2\u221a3 X 2\u221a3) R30\u00b0-Sn reconstruction\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Applied surface science\";s:9:\"\u0000*\u0000stitle\";s:15:\"Appl. surf. sci\";s:7:\"\u0000*\u0000date\";s:4:\"1996\";s:9:\"\u0000*\u0000volume\";s:6:\"104-05\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"124\";s:8:\"\u0000*\u0000epage\";s:3:\"129\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0169-4332\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"LEVERMANN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"A. H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:11:\"HOWES, P. B\";i:1;s:13:\"JOHNSON, R. L\";i:2;s:13:\"EDWARDS, K. A\";i:3;s:12:\"ANYELE, H. T\";i:4;s:13:\"MATTHAI, C. C\";i:5;s:15:\"MACDONALD, J. E\";i:6;s:13:\"FEIDENHANS, R\";i:7;s:14:\"LOTTERMOSER, L\";i:8;s:11:\"SEEHOFER, L\";i:9;s:13:\"FALKENBERG, G\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:79:\"ICFSI-5 : International Conference on the Formation of Semiconductor Interfaces\";s:8:\"\u0000*\u0000title\";s:75:\"The atomic structure of the Si(111) (2\u221a3 X 2\u221a3) R30\u00b0-Sn reconstruction\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:16:\"Elsevier Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0169-4332(96)00132-8\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:75:\"The atomic structure of the Si(111) (2\u221a3 X 2\u221a3) R30\u00b0-Sn reconstruction\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Applied surface science\";s:9:\"\u0000*\u0000stitle\";s:15:\"Appl. surf. sci\";s:7:\"\u0000*\u0000date\";s:4:\"1996\";s:9:\"\u0000*\u0000volume\";s:6:\"104-05\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"124\";s:8:\"\u0000*\u0000epage\";s:3:\"129\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0169-4332\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"LEVERMANN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"A. H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:11:\"HOWES, P. B\";i:1;s:13:\"JOHNSON, R. L\";i:2;s:13:\"EDWARDS, K. A\";i:3;s:12:\"ANYELE, H. T\";i:4;s:13:\"MATTHAI, C. C\";i:5;s:15:\"MACDONALD, J. E\";i:6;s:13:\"FEIDENHANS, R\";i:7;s:14:\"LOTTERMOSER, L\";i:8;s:11:\"SEEHOFER, L\";i:9;s:13:\"FALKENBERG, G\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:79:\"ICFSI-5 : International Conference on the Formation of Semiconductor Interfaces\";s:8:\"\u0000*\u0000title\";s:75:\"The atomic structure of the Si(111) (2\u221a3 X 2\u221a3) R30\u00b0-Sn reconstruction\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:16:\"Elsevier Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0169-4332(96)00132-8\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0169-4332(96)00132-8\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:75:\"The atomic structure of the Si(111) (2\u221a3 X 2\u221a3) R30\u00b0-Sn reconstruction\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Applied surface science\";s:9:\"\u0000*\u0000stitle\";s:15:\"Appl. surf. sci\";s:7:\"\u0000*\u0000date\";s:4:\"1996\";s:9:\"\u0000*\u0000volume\";s:6:\"104-05\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"124\";s:8:\"\u0000*\u0000epage\";s:3:\"129\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0169-4332\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"LEVERMANN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"A. H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:11:\"HOWES, P. B\";i:1;s:13:\"JOHNSON, R. L\";i:2;s:13:\"EDWARDS, K. A\";i:3;s:12:\"ANYELE, H. T\";i:4;s:13:\"MATTHAI, C. C\";i:5;s:15:\"MACDONALD, J. E\";i:6;s:13:\"FEIDENHANS, R\";i:7;s:14:\"LOTTERMOSER, L\";i:8;s:11:\"SEEHOFER, L\";i:9;s:13:\"FALKENBERG, G\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:79:\"ICFSI-5 : International Conference on the Formation of Semiconductor Interfaces\";s:8:\"\u0000*\u0000title\";s:75:\"The atomic structure of the Si(111) (2\u221a3 X 2\u221a3) R30\u00b0-Sn reconstruction\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:16:\"Elsevier Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0169-4332(96)00132-8\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:75:\"The atomic structure of the Si(111) (2\u221a3 X 2\u221a3) R30\u00b0-Sn reconstruction\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Applied surface science\";s:9:\"\u0000*\u0000stitle\";s:15:\"Appl. surf. sci\";s:7:\"\u0000*\u0000date\";s:4:\"1996\";s:9:\"\u0000*\u0000volume\";s:6:\"104-05\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"124\";s:8:\"\u0000*\u0000epage\";s:3:\"129\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0169-4332\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"LEVERMANN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"A. H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:11:\"HOWES, P. B\";i:1;s:13:\"JOHNSON, R. L\";i:2;s:13:\"EDWARDS, K. A\";i:3;s:12:\"ANYELE, H. T\";i:4;s:13:\"MATTHAI, C. C\";i:5;s:15:\"MACDONALD, J. E\";i:6;s:13:\"FEIDENHANS, R\";i:7;s:14:\"LOTTERMOSER, L\";i:8;s:11:\"SEEHOFER, L\";i:9;s:13:\"FALKENBERG, G\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:79:\"ICFSI-5 : International Conference on the Formation of Semiconductor Interfaces\";s:8:\"\u0000*\u0000title\";s:75:\"The atomic structure of the Si(111) (2\u221a3 X 2\u221a3) R30\u00b0-Sn reconstruction\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:16:\"Elsevier Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:29:\"10.1016\/S0169-4332(96)00132-8\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:75:\"The atomic structure of the Si(111) (2\u221a3 X 2\u221a3) R30\u00b0-Sn reconstruction\";s:9:\"\u0000*\u0000jtitle\";s:23:\"Applied surface science\";s:9:\"\u0000*\u0000stitle\";s:15:\"Appl. surf. sci\";s:7:\"\u0000*\u0000date\";s:4:\"1996\";s:9:\"\u0000*\u0000volume\";s:6:\"104-05\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"124\";s:8:\"\u0000*\u0000epage\";s:3:\"129\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0169-4332\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"LEVERMANN\";s:10:\"\u0000*\u0000aufirst\";s:4:\"A. H\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:10:{i:0;s:11:\"HOWES, P. B\";i:1;s:13:\"JOHNSON, R. L\";i:2;s:13:\"EDWARDS, K. A\";i:3;s:12:\"ANYELE, H. T\";i:4;s:13:\"MATTHAI, C. C\";i:5;s:15:\"MACDONALD, J. E\";i:6;s:13:\"FEIDENHANS, R\";i:7;s:14:\"LOTTERMOSER, L\";i:8;s:11:\"SEEHOFER, L\";i:9;s:13:\"FALKENBERG, G\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:79:\"ICFSI-5 : International Conference on the Formation of Semiconductor Interfaces\";s:8:\"\u0000*\u0000title\";s:75:\"The atomic structure of the Si(111) (2\u221a3 X 2\u221a3) R30\u00b0-Sn reconstruction\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:16:\"Elsevier Science\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
