Initial stage of oxidation of hydrogen-terminated silicon surfaces
- Author
- HATTORI, T1 ; AIBA, T1 ; IIJIMA, E1 ; OKUBE, Y1 ; NOHIRA, H1 ; TATE, N2 ; KATAYAMA, M2
[1] Department of Electrical and Electronic Engineering, Musashi Institute of Technology, 1-28-1 Tamazutsumi, Setagaya-ku, Tokyo 158, Japan
[2] Shin-Etu Handotai Co. Lid., 2-13-1 Isobe, Annaka, Gumma 379-01, Japan - Conference title
- ICFSI-5 : International Conference on the Formation of Semiconductor Interfaces
- Conference name
- ICFSI-5 : International Conference on the Formation of Semiconductor Interfaces (5 ; Princeton, NJ 1995-06-26)
- Author (monograph)
- KAHN, A (Editor)1 ; LUDEKE, R (Editor)2
[1] Princeton University, Princeton, NJ, United States
[2] IBM T.J. Watson Research Center, Yorktown Heights, NY, United States - Source
Applied surface science. 1996, Vol 104-05, pp 323-328 ; ref : 22 ref
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Etude expérimentale Hydrogénation Matériau semiconducteur Oxydation Rayon X Silicium Spectre IR Spectre absorption Spectrométrie photoélectron Structure surface Terminaison surface Si
- Keyword (en)
- Experimental study Hydrogenation Semiconductor materials Oxidation X radiation Silicon Infrared spectra Absorption spectra Photoelectron spectroscopy Surface structure Surface termination
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35B Surface structure and topography
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A65 Surface treatments
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2498344
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0169-4332(96)00165-1 
https://dx.doi.org/10.1016/S0169-4332(96)00165-1
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