Molecular beam epitaxial growth of thin CaF2 films on vicinal Si(111) surfaces
- Author
- KIM, B. M1 ; VENTRICE, C. A1 ; MERCER, T2 ; OVERNEY, R3 ; SCHOWALTER, L. J1
[1] Department of Physics, Rensselaer Polytechnic Institute, Troy, NY 12180, United States
[2] Department of Physics, Drexel University, Philadelphia, PA 19104, United States
[3] Exxon Research and Engineering Company, Exxon, Annandale, NJ 08801, United States - Conference title
- ICFSI-5 : International Conference on the Formation of Semiconductor Interfaces
- Conference name
- ICFSI-5 : International Conference on the Formation of Semiconductor Interfaces (5 ; Princeton, NJ 1995-06-26)
- Author (monograph)
- KAHN, A (Editor)1 ; LUDEKE, R (Editor)2
[1] Princeton University, Princeton, NJ, United States
[2] IBM T.J. Watson Research Center, Yorktown Heights, NY, United States - Source
Applied surface science. 1996, Vol 104-05, pp 409-416 ; ref : 17 ref
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Calcium fluorure Coalescence Composé minéral Couche mince Croissance cristalline en phase vapeur Epitaxie jet moléculaire Etude expérimentale Microscopie force atomique Mécanisme croissance Méthode couche atomique Nucléation RHEED SEM Structure îlot Ca F CaF2
- Keyword (en)
- Calcium fluorides Coalescence Inorganic compounds Thin films Crystal growth from vapors Molecular beam epitaxy Experimental study Atomic force microscopy Growth mechanism Atomic layer method Nucleation RHEED SEM Island structure
- Keyword (es)
- Mecanismo crecimiento Método capa atómica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2500324
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0169-4332(96)00179-1 
https://dx.doi.org/10.1016/S0169-4332(96)00179-1
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