Control of oxygen precipitates distribution in large-diameter silicon wafers after thermal annealing
- Author
- ONO, H1 ; IKARASHI, T1 ; KIMURA, S1 ; TANIKAWA, A1 ; TERASHIMA, K1
[1] Microelectronics Research Laboratories, Japan - Source
NEC research & development. 1996, Vol 37, Num 4, pp 423-431 ; ref : 14 ref
- CODEN
- NECRAU
- ISSN
- 0547-051X
- Scientific domain
- Electronics; Computer science
- Publisher
- NEC Creative, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Etude expérimentale Fabrication microélectronique Fiabilité Formation défaut Grande dimension Oxygène Pastille électronique Précipité Recuit thermique Silicium
- Keyword (en)
- Experimental study Microelectronic processing Reliability Defect formation Large dimension Oxygen Silicon wafers Precipitate Thermal annealing Silicon
- Keyword (es)
- Estudio experimental Formación defecto Gran dimensión Precipitado Recocido térmico
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2524937
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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