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Red-emitting semiconductor quantum dot lasers

Author
FAFARD, S1 ; HINZER, K1 ; RAYMOND, S1 ; DION, M1 ; MCCAFFREY, J1 ; FENG, Y1 ; CHARBONNEAU, S1
[1] Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario, K1A 0R6, Canada
Source

Science (Washington, D.C.). 1996, Vol 274, Num 5291, pp 1350-1353

CODEN
SCIEAS
ISSN
0036-8075
Scientific domain
Multidisciplinary
Publisher
American Association for the Advancement of Science, Washington, DC
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Aluminium arséniure Composé ternaire Courant seuil Domaine température 0-13 K Domaine température 13-65 K Etude expérimentale Indium arséniure Laser multimode Laser semiconducteur Lumière rouge Point quantique Puits quantique contraint Rayonnement visible Al As In InAlAs
Keyword (en)
Aluminium arsenides Ternary compounds Threshold current Temperature range 0-13 K Temperature range 13-65 K Experimental study Indium arsenides Multimode laser Semiconductor lasers Red light Quantum dots Strained quantum well Visible radiation
Keyword (es)
Laser multimodo Luz roja Pozo cuántico forzado
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes

Pacs
4255P Semiconductor lasers; laser diodes

Discipline
Physics : optics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
2531145

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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