Monolithic integration of nitride-based transistor with Light Emitting Diode for sensing applications
- Author
- KALAITZAKIS, F. G1 2 ; ILIOPOULOS, E1 3 ; KONSTANTINIDIS, G1 ; PELEKANOS, N. T1 2
[1] Microelectronics Research Group, IESL, FORTH, P.O. Box 1527, 71110 Heraklion, Greece
[2] Materials Science & Technology Dept., University of Crete, P.O. Box 2208, 71003 Heraklion, Greece
[3] Physics Dept., University of Crete, P.O. Box 2208, 71003 Heraklion, Greece - Conference title
- Micro&Nano 2010: 4th International Conference on Micro-Nanoelectronics, Nanotechnologies & MEMs December 12-15, 2010, NCSR Demokritos, Athens, Greece
- Conference name
- Micro&Nano 2010 International Conference on Micro-Nanoelectronics, Nanotechnologies & MEMs (4 ; Athens 2010-12-12)
- Author (monograph)
- NASSIOPOULOU, Androula G (Editor)1
[1] NCSR Demokritos, Institute of Microelectronics (IMEL), Greece - Source
Microelectronic engineering. 2012, Vol 90, Num Feb, pp 33-36, 4 p ; ref : 6 ref
- CODEN
- MIENEF
- ISSN
- 0167-9317
- Scientific domain
- Electronics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Biological sensing Chemical sensing HEMT based sensor Nitride LED Sensor
- Keyword (fr)
- Capteur chimique Capteur mesure Caractéristique électrique Circuit intégré monolithique Composé binaire Composé ternaire Diode électroluminescente Emission optique Evaluation performance Nitrure d'aluminium Nitrure de gallium Traitement matériau Transistor mobilité électron élevée 0707D 8560J AlGaN GaN Composé III-V Dispositif optoélectronique
- Keyword (en)
- Chemical sensor Measurement sensor Electrical characteristic Monolithic integrated circuit Binary compound Ternary compound Light emitting diode Light emission Performance evaluation Aluminium nitride Gallium nitride Material processing High electron mobility transistor III-V compound Optoelectronic device
- Keyword (es)
- Captador químico Captador medida Característica eléctrica Circuito integrado monolítico Compuesto binario Compuesto ternario Diodo electroluminescente Emisión óptica Evaluación prestación Aluminio nitruro Galio nitruro Tratamiento material Transistor movibilidad elevada electrones Compuesto III-V Dispositivo optoelectrónico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00G Instruments, apparatus, components and techniques common to several branches of physics and astronomy / 001B00G07 General equipment and techniques / 001B00G07D Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics Metrology
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 25363201
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mee.2011.04.067 
https://dx.doi.org/10.1016/j.mee.2011.04.067
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.mee.2011.04.067\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:101:\"Monolithic integration of nitride-based transistor with Light Emitting Diode for sensing applications\";s:9:\"\u0000*\u0000jtitle\";s:27:\"Microelectronic engineering\";s:9:\"\u0000*\u0000stitle\";s:18:\"Microelectron. eng\";s:7:\"\u0000*\u0000date\";s:4:\"2012\";s:9:\"\u0000*\u0000volume\";s:2:\"90\";s:8:\"\u0000*\u0000issue\";s:3:\"Feb\";s:8:\"\u0000*\u0000spage\";s:2:\"33\";s:8:\"\u0000*\u0000epage\";s:2:\"36\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0167-9317\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:11:\"KALAITZAKIS\";s:10:\"\u0000*\u0000aufirst\";s:4:\"F. G\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:13:\"ILIOPOULOS, E\";i:1;s:17:\"KONSTANTINIDIS, G\";i:2;s:15:\"PELEKANOS, N. T\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MIENEF\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:149:\"Micro&Nano 2010: 4th International Conference on Micro-Nanoelectronics, Nanotechnologies & MEMs December 12-15, 2010, NCSR Demokritos, Athens, Greece\";s:8:\"\u0000*\u0000title\";s:101:\"Monolithic integration of nitride-based transistor with Light Emitting Diode for sensing applications\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.mee.2011.04.067\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:101:\"Monolithic integration of nitride-based transistor with Light Emitting Diode for sensing applications\";s:9:\"\u0000*\u0000jtitle\";s:27:\"Microelectronic engineering\";s:9:\"\u0000*\u0000stitle\";s:18:\"Microelectron. eng\";s:7:\"\u0000*\u0000date\";s:4:\"2012\";s:9:\"\u0000*\u0000volume\";s:2:\"90\";s:8:\"\u0000*\u0000issue\";s:3:\"Feb\";s:8:\"\u0000*\u0000spage\";s:2:\"33\";s:8:\"\u0000*\u0000epage\";s:2:\"36\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0167-9317\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:11:\"KALAITZAKIS\";s:10:\"\u0000*\u0000aufirst\";s:4:\"F. G\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:13:\"ILIOPOULOS, E\";i:1;s:17:\"KONSTANTINIDIS, G\";i:2;s:15:\"PELEKANOS, N. T\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MIENEF\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:149:\"Micro&Nano 2010: 4th International Conference on Micro-Nanoelectronics, Nanotechnologies & MEMs December 12-15, 2010, NCSR Demokritos, Athens, Greece\";s:8:\"\u0000*\u0000title\";s:101:\"Monolithic integration of nitride-based transistor with Light Emitting Diode for sensing applications\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.mee.2011.04.067\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.mee.2011.04.067\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:101:\"Monolithic integration of nitride-based transistor with Light Emitting Diode for sensing applications\";s:9:\"\u0000*\u0000jtitle\";s:27:\"Microelectronic engineering\";s:9:\"\u0000*\u0000stitle\";s:18:\"Microelectron. eng\";s:7:\"\u0000*\u0000date\";s:4:\"2012\";s:9:\"\u0000*\u0000volume\";s:2:\"90\";s:8:\"\u0000*\u0000issue\";s:3:\"Feb\";s:8:\"\u0000*\u0000spage\";s:2:\"33\";s:8:\"\u0000*\u0000epage\";s:2:\"36\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0167-9317\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:11:\"KALAITZAKIS\";s:10:\"\u0000*\u0000aufirst\";s:4:\"F. G\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:13:\"ILIOPOULOS, E\";i:1;s:17:\"KONSTANTINIDIS, G\";i:2;s:15:\"PELEKANOS, N. T\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MIENEF\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:149:\"Micro&Nano 2010: 4th International Conference on Micro-Nanoelectronics, Nanotechnologies & MEMs December 12-15, 2010, NCSR Demokritos, Athens, Greece\";s:8:\"\u0000*\u0000title\";s:101:\"Monolithic integration of nitride-based transistor with Light Emitting Diode for sensing applications\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.mee.2011.04.067\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:101:\"Monolithic integration of nitride-based transistor with Light Emitting Diode for sensing applications\";s:9:\"\u0000*\u0000jtitle\";s:27:\"Microelectronic engineering\";s:9:\"\u0000*\u0000stitle\";s:18:\"Microelectron. eng\";s:7:\"\u0000*\u0000date\";s:4:\"2012\";s:9:\"\u0000*\u0000volume\";s:2:\"90\";s:8:\"\u0000*\u0000issue\";s:3:\"Feb\";s:8:\"\u0000*\u0000spage\";s:2:\"33\";s:8:\"\u0000*\u0000epage\";s:2:\"36\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0167-9317\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:11:\"KALAITZAKIS\";s:10:\"\u0000*\u0000aufirst\";s:4:\"F. G\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:13:\"ILIOPOULOS, E\";i:1;s:17:\"KONSTANTINIDIS, G\";i:2;s:15:\"PELEKANOS, N. T\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MIENEF\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:149:\"Micro&Nano 2010: 4th International Conference on Micro-Nanoelectronics, Nanotechnologies & MEMs December 12-15, 2010, NCSR Demokritos, Athens, Greece\";s:8:\"\u0000*\u0000title\";s:101:\"Monolithic integration of nitride-based transistor with Light Emitting Diode for sensing applications\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.mee.2011.04.067\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:101:\"Monolithic integration of nitride-based transistor with Light Emitting Diode for sensing applications\";s:9:\"\u0000*\u0000jtitle\";s:27:\"Microelectronic engineering\";s:9:\"\u0000*\u0000stitle\";s:18:\"Microelectron. eng\";s:7:\"\u0000*\u0000date\";s:4:\"2012\";s:9:\"\u0000*\u0000volume\";s:2:\"90\";s:8:\"\u0000*\u0000issue\";s:3:\"Feb\";s:8:\"\u0000*\u0000spage\";s:2:\"33\";s:8:\"\u0000*\u0000epage\";s:2:\"36\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0167-9317\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:11:\"KALAITZAKIS\";s:10:\"\u0000*\u0000aufirst\";s:4:\"F. G\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:3:{i:0;s:13:\"ILIOPOULOS, E\";i:1;s:17:\"KONSTANTINIDIS, G\";i:2;s:15:\"PELEKANOS, N. T\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MIENEF\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:149:\"Micro&Nano 2010: 4th International Conference on Micro-Nanoelectronics, Nanotechnologies & MEMs December 12-15, 2010, NCSR Demokritos, Athens, Greece\";s:8:\"\u0000*\u0000title\";s:101:\"Monolithic integration of nitride-based transistor with Light Emitting Diode for sensing applications\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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