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A comparative study for quantum transport calculations of nanosized field-effect transistors

Author
JIANG, Xiang-Wei1 ; LI, Shu-Shen1 ; WANG, Lin-Wang2
[1] State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
[2] Computational Research Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States
Source

Solid-state electronics. 2012, Vol 68, pp 56-62, 7 p ; ref : 46 ref

ISSN
0038-1101
Scientific domain
Electronics
Publisher
Elsevier, Kidlington
Publication country
United Kingdom
Document type
Article
Language
English
Author keyword
Double-gate LCBB QFL Quantum Self-consistent TBS
Keyword (fr)
Autocohérence Caractéristique courant tension Combinaison linéaire Couche ultramince Densité charge Drain Effet tunnel Etude comparative Niveau Fermi Puits potentiel Transistor effet champ Transport balistique Transport quantique
Keyword (en)
Self consistency Voltage current curve Linear combination Ultrathin films Charge density Drain Tunnel effect Comparative study Fermi level Potential well Field effect transistor Ballistic transport Quantum transport
Keyword (es)
Autocoherencia Característica corriente tensión Combinación lineal Densidad carga Dren Efecto túnel Estudio comparativo Nivel Fermi Pozo potencial Transistor efecto campo Transporte balístico Transporte cuántico
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
25424801

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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