Critical current density of Bi-2212 thick films processed by partial melting
- Author
- BUHL, D1 ; LANG, T1 ; GAUCKLER, L. J1
[1] ETH Zürich, Nonmetallic Materials, Sonneggstrasse 5, 8092 Zürich, Switzerland - Source
Superconductor science & technology (Print). 1997, Vol 10, Num 1, pp 32-40 ; ref : 38 ref
- ISSN
- 0953-2048
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Atmosphère contrôlée Bismuth oxyde Calcium oxyde Composé minéral Composé n éléments Courant critique Cristallisation Cuivre oxyde Densification Dépendance température Epaisseur Etude expérimentale Film supraconducteur Ligne irréversibilité Préparation Recuit Strontium oxyde Supraconducteur haute température Traitement thermique Vitesse refroidissement
- Keyword (en)
- Controlled atmospheres Bismuth oxides Calcium oxides Inorganic compounds Multi-element compounds Critical currents Crystallization Copper oxides Densification Temperature dependence Thickness Experimental study Superconducting films Irreversibility line Preparation Annealing Strontium oxides High temperature superconductors Heat treatment Cooling rate
- Keyword (es)
- Preparación
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70D Superconductivity / 001B70D25 Properties of type I and type II superconductors / 001B70D25S Critical currents
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2548035
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0953-2048/10/1/005 
https://dx.doi.org/10.1088/0953-2048/10/1/005
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