Low-Resistance Electrical Contact to Carbon Nanotubes With Graphitic Interfacial Layer
- Author
- YANG CHAI1 ; HAZEGHI, Arash2 ; TAKEI, Kuniharu3 ; CHEN, Hong-Yu1 ; CHAN, Philip C. H4 5 ; JAVEY, Ali3 ; PHILIP WONG, H.-S1
[1] Department of Electrical Engineering and the Center for Integrated Systems, Stanford University, Stanford, CA 94305, United States
[2] Quswami Inc., San Francisco, CA 94111, United States
[3] Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, CA 94720, United States
[4] Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Kowloon, Hong-Kong
[5] Department of Electronic and Information Engineering, Hong Kong Polytechnic University, Kowloon, Hong-Kong - Source
I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 1, pp 12-19, 8 p ; ref : 41 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Amorphous carbon carbon nanotube (CNT) contact field-effect transistor graphene graphitic interface
- Keyword (fr)
- Carbone Catalyseur Circuit intégré Conductivité électrique Contact électrique Couche interfaciale Empilement Graphène Interconnexion Matériau amorphe Nanotube carbone Nanoélectronique Recuit Résistance contact Semiconducteur type p Température ambiante Transistor effet champ 8107D Semiconducteur bande interdite nulle
- Keyword (en)
- Carbon Catalyst Integrated circuit Electrical conductivity Electric contact Interfacial layer Stacking Graphene Interconnection Amorphous material Carbon nanotubes Nanoelectronics Annealing Contact resistance p type semiconductor Room temperature Field effect transistor Zero band gap semiconductors
- Keyword (es)
- Carbono Catalizador Circuito integrado Conductividad eléctrica Contacto eléctrico Capa interfacial Apilamiento Graphene Interconexión Material amorfo Nanoelectrónica Recocido Resistencia contacto Semiconductor tipo p Temperatura ambiente Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A07 Nanoscale materials and structures: fabrication and characterization / 001B80A07D Nanotubes
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F18 Molecular electronics, nanoelectronics
- Discipline
- Electronics Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 25488056
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2011.2170216 
https://dx.doi.org/10.1109/TED.2011.2170216
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:24:\"10.1109\/TED.2011.2170216\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:86:\"Low-Resistance Electrical Contact to Carbon Nanotubes With Graphitic Interfacial Layer\";s:9:\"\u0000*\u0000jtitle\";s:41:\"I.E.E.E. transactions on electron devices\";s:9:\"\u0000*\u0000stitle\";s:28:\"IEEE trans. electron devices\";s:7:\"\u0000*\u0000date\";s:4:\"2012\";s:9:\"\u0000*\u0000volume\";s:2:\"59\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:2:\"12\";s:8:\"\u0000*\u0000epage\";s:2:\"19\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9383\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"YANG CHAI\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:14:\"HAZEGHI, Arash\";i:1;s:15:\"TAKEI, Kuniharu\";i:2;s:13:\"CHEN, Hong-Yu\";i:3;s:17:\"CHAN, Philip C. H\";i:4;s:10:\"JAVEY, Ali\";i:5;s:17:\"PHILIP WONG, H.-S\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IETDAI\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:86:\"Low-Resistance Electrical Contact to Carbon Nanotubes With Graphitic Interfacial Layer\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"8\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:24:\"10.1109\/TED.2011.2170216\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:86:\"Low-Resistance Electrical Contact to Carbon Nanotubes With Graphitic Interfacial Layer\";s:9:\"\u0000*\u0000jtitle\";s:41:\"I.E.E.E. transactions on electron devices\";s:9:\"\u0000*\u0000stitle\";s:28:\"IEEE trans. electron devices\";s:7:\"\u0000*\u0000date\";s:4:\"2012\";s:9:\"\u0000*\u0000volume\";s:2:\"59\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:2:\"12\";s:8:\"\u0000*\u0000epage\";s:2:\"19\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9383\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"YANG CHAI\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:14:\"HAZEGHI, Arash\";i:1;s:15:\"TAKEI, Kuniharu\";i:2;s:13:\"CHEN, Hong-Yu\";i:3;s:17:\"CHAN, Philip C. H\";i:4;s:10:\"JAVEY, Ali\";i:5;s:17:\"PHILIP WONG, H.-S\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IETDAI\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:86:\"Low-Resistance Electrical Contact to Carbon Nanotubes With Graphitic Interfacial Layer\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"8\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:24:\"10.1109\/TED.2011.2170216\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:24:\"10.1109\/TED.2011.2170216\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:86:\"Low-Resistance Electrical Contact to Carbon Nanotubes With Graphitic Interfacial Layer\";s:9:\"\u0000*\u0000jtitle\";s:41:\"I.E.E.E. transactions on electron devices\";s:9:\"\u0000*\u0000stitle\";s:28:\"IEEE trans. electron devices\";s:7:\"\u0000*\u0000date\";s:4:\"2012\";s:9:\"\u0000*\u0000volume\";s:2:\"59\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:2:\"12\";s:8:\"\u0000*\u0000epage\";s:2:\"19\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9383\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"YANG CHAI\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:14:\"HAZEGHI, Arash\";i:1;s:15:\"TAKEI, Kuniharu\";i:2;s:13:\"CHEN, Hong-Yu\";i:3;s:17:\"CHAN, Philip C. H\";i:4;s:10:\"JAVEY, Ali\";i:5;s:17:\"PHILIP WONG, H.-S\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IETDAI\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:86:\"Low-Resistance Electrical Contact to Carbon Nanotubes With Graphitic Interfacial Layer\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"8\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:24:\"10.1109\/TED.2011.2170216\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:86:\"Low-Resistance Electrical Contact to Carbon Nanotubes With Graphitic Interfacial Layer\";s:9:\"\u0000*\u0000jtitle\";s:41:\"I.E.E.E. transactions on electron devices\";s:9:\"\u0000*\u0000stitle\";s:28:\"IEEE trans. electron devices\";s:7:\"\u0000*\u0000date\";s:4:\"2012\";s:9:\"\u0000*\u0000volume\";s:2:\"59\";s:8:\"\u0000*\u0000issue\";s:1:\"1\";s:8:\"\u0000*\u0000spage\";s:2:\"12\";s:8:\"\u0000*\u0000epage\";s:2:\"19\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0018-9383\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"YANG CHAI\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:6:{i:0;s:14:\"HAZEGHI, Arash\";i:1;s:15:\"TAKEI, Kuniharu\";i:2;s:13:\"CHEN, Hong-Yu\";i:3;s:17:\"CHAN, Philip C. H\";i:4;s:10:\"JAVEY, Ali\";i:5;s:17:\"PHILIP WONG, H.-S\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"IETDAI\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:86:\"Low-Resistance Electrical Contact to Carbon Nanotubes With Graphitic Interfacial Layer\";s:8:\"\u0000*\u0000place\";s:12:\"New York, NY\";s:6:\"\u0000*\u0000pub\";s:49:\"Institute of Electrical and Electronics Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"8\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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