Core-level study of the K/Si(100)c(4 x 2) system: beyond the room temperature saturation coverage
- Author
- CHAO, Y.-C1 ; JOHANSSON, L. S. O2 ; UHRBERG, R. I. G1
[1] Department of Physics and Measurement Technology, Linköping Institute of Technology, 581 83 Linköping, Sweden
[2] Department of Synchrotron Radiation Research, Institute of Physics, University of Lund, Box 118, 221 00 Lund, Sweden - Source
Surface science. 1997, Vol 372, Num 1-3, pp 64-70 ; ref : 29 ref
- Publisher
- Elsevier Science, Amsterdam
/
Elsevier Science, Lausanne
/
Elsevier Science, New York, NY
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Degré recouvrement Etude expérimentale Niveau coeur Potassium Silicium Spectrométrie photoélectron Structure adsorption Structure surface K Si
- Keyword (en)
- Coverage rate Experimental study Core levels Potassium Silicon Photoelectron spectroscopy Adsorption structure Surface structure
- Keyword (es)
- Grado recubrimiento Estructura adsorción
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70I Electron and ion emission by liquids and solids; impact phenomena / 001B70I60 Photoemission and photoelectron spectra / 001B70I60D Adsorbed layers and thin films
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2554531
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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