Correlation of PbMoO4 crystal imperfections to Czochralski growth process
- Author
- ZENG, H. C1
[1] Department of Chemical Engineering, Faculty of Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260, Singapore - Source
Journal of crystal growth. 1997, Vol 171, Num 1-2, pp 136-145 ; ref : 22 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- ATD Attaque chimique Composition chimique Composé ternaire Croissance cristalline en phase fondue Défaut cristallin Défaut croissance Etude expérimentale Hétérogénéïté Impureté Monocristal Méthode Czochralski Plomb molybdate Rayonnement visible Relation fabrication propriété Transmission optique Mo O Pb PbMoO4 Composé minéral
- Keyword (en)
- DTA Chemical etching Chemical composition Ternary compounds Crystal growth from melts Crystal defects Growth defect Experimental study Inhomogeneity Impurities Monocrystals Czochralski method Lead molybdates Visible radiation Fabrication property relation Optical transmission Inorganic compounds
- Keyword (es)
- Ataque químico Defecto crecimiento Relación fabricación propiedad Transmisión óptica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72F Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10F Growth from melts; zone melting and refining
- Pacs
- 6172F Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2558529
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0022-0248(96)00465-4 
https://dx.doi.org/10.1016/S0022-0248(96)00465-4
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