The Influence and Improvement of Through Pellicle Image Placement
- Author
- WEI CYUAN LO1 ; YUNG FENG CHENG1 ; MING JUI CHEN1 ; TAKUSHIMA, Katsuhiro2 ; TASHIRO, Shinichiroh2
[1] Advanced OPC2 Department, ATD Pattern. United Microelectronics Corporation, No. 18, Nan-Ke Rd. , Science-Based Industrial Park, Sinshih Township, Tainan County 741, Taiwan, Province of China
[2] HOYA Corporation, Mask division 1375, Kawaguchi-cho, Hachioji-shi, Tokyo 193-8525, Japan - Conference title
- Photomask technology 2011 (19-22 September 2011, Monterey, California, United States)
- Conference name
- Photomask technology. Conference (Monterey CA 2011-09-19)
- Author (monograph)
- Maurer, Wilhelm (Editor); Abboud, Frank E (Editor)
SPIE, United States (Organiser of meeting) - Source
Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8166 ; 81663A.1-81663A.7 ; 2 ; ref : 2 ref
- CODEN
- PSISDG
- ISSN
- 0277-786X
- ISBN
- 978-0-8194-8791-9
- Scientific domain
- Electronics; Optics; Physics
- Publisher
- SPIE, Bellingham Wash
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Fabrication microélectronique Masque Pastille électronique Photolithographie Positionnement Revêtement protecteur
- Keyword (en)
- Microelectronic fabrication Mask Wafer Photolithography Positioning Protective coatings
- Keyword (es)
- Fabricación microeléctrica Máscara Pastilla electrónica Fotolitografía Posicionamiento Revestimiento protector
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 25602074
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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