Bases de datos bibliográficos Pascal y Francis

Ayuda

Exportación

Selección :

Enlace permanente
http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=25614405

Improvements in (112̄2) semipolar GaN crystal quality by graded superlattices

Autor
XU, S. R1 ; ZHANG, J. C1 ; CAO, Y. R2 ; ZHOU, X. W1 ; XUE, J. S1 ; LIN, Z. Y1 ; MA, J. C1 ; BAO, F3 ; HAO, Y1
[1] Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
[2] School of Electronical & Machanical Engineering, Xidian University, Xi'an, 710071, China
[3] Suzhou Institute of Nano-Tech & Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China
Fuente

Thin solid films. 2012, Vol 520, Num 6, pp 1909-1912, 4 p ; ref : 24 ref

CODEN
THSFAP
ISSN
0040-6090
Campo Científico
Crystallography; Metallurgy, welding; Condensed state physics
Editor
Elsevier, Amsterdam
País de la publicación
Netherlands
Tipo de documento
Article
Idioma
English
Palabra clave de autor
GaN Semipolar Superlattice
Palabra clave (fr)
Analyse diffraction RX Composé III-V Couche mince Dislocation filetée Défaut empilement Mesure température Microscopie force atomique Microscopie électronique transmission Méthode MOCVD Nitrure de gallium Perfection cristalline Photoluminescence Recombinaison non radiative Semiconducteur III-V Superréseau 6172N 6855J 8105E 8115G GaN
Palabra clave (in)
X-ray diffraction analysis III-V compound Thin films Threading dislocation Stacking faults Temperature measurement Atomic force microscopy Transmission electron microscopy MOCVD Gallium nitride Crystal perfection Photoluminescence Non radiative recombination III-V semiconductors Superlattices
Palabra clave (es)
Compuesto III-V Dislocación aterrajada Galio nitruro Perfección cristalina Recombinación no radiativa
Clasificación
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72N Stacking faults and other planar or extended defects

Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05H Other semiconductors

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)

Disciplina
Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
Procedencia
Inist-CNRS
Base de datos
PASCAL
Identificador INIST
25614405

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

Acceso al documento

Buscar en la web