Gate-Controlled Nonlinear Conductivity of Dirac Fermion in Graphene Field-Effect Transistors Measured by Terahertz Time-Domain Spectroscopy
- Author
- MAENG, Inhee1 ; LIM, Seongchu2 ; SEUNG JIN CHAE2 ; YOUNG HEE LEE2 ; CHOI, Hyunyong3 ; SON, Joo-Hiuk1
[1] Department of Physics, University of Seoul, Seoul 130-743, Korea, Republic of
[2] Department of Physics, Department of Energy Science, Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Korea, Republic of
[3] School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea, Republic of - Source
Nano letters (Print). 2012, Vol 12, Num 2, pp 551-555, 5 p ; ref : 31 ref
- Publisher
- American Chemical Society, Washington, DC
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Conductivité optique Densité porteur charge Domaine fréquence THz Dépôt chimique phase vapeur Effet non linéaire Equation Dirac Graphène Microscopie force atomique Modèle Drude Méthode domaine temps Résistivité couche Transistor effet champ
- Keyword (en)
- Optical conductivity Charge carrier density THz range Chemical vapor deposition Non linear effect Dirac equation Graphene Atomic force microscopy Drude model Time domain method Sheet resistivity Field effect transistor
- Keyword (es)
- Conductividad óptica Concentración portador carga Depósito químico fase vapor Efecto no lineal Ecuación Dirac Graphene Microscopía fuerza atómica Método dominio tiempo Resistividad capa Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 25626801
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1021/nl202442b 
https://dx.doi.org/10.1021/nl202442b
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