Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates
- Autor
- HUY NGUYEN, Van1 ; DOBBIE, A1 ; MYRONOV, M1 ; NORRIS, Dj2 ; WALTHER, T2 ; LEADLEY, D. R1
[1] Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
[2] Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdom - Titulo de la conferencia
- 7th International Conference on Si Epitaxy and Heterostructures (ICSI-7)
- Nombre de la conferencia
- International Conference on Si Epitaxy and Heterostructures (ICSI) (ICSI) (7 ; Leuven 2011-08-29)
- Autor ( monografía)
- HARTMANN, Jean-Michel (Editor); LOO, Roger (Editor); NGOC DUY NGUYEN (Editor); HOUSSA, Michel (Editor); CAYMAX, Matty (Editor)
- Fuente
Thin solid films. 2012, Vol 520, Num 8, pp 3222-3226, 5 p ; ref : 15 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Campo Científico
- Crystallography; Metallurgy, welding; Condensed state physics
- Editor
- Elsevier, Amsterdam
- País de la publicación
- Netherlands
- Tipo de documento
- Conference Paper
- Idioma
- English
- Palabra clave de autor
- (110) (111) Chemical vapour deposition Epitaxy Germanium Silicon Stacking fault formation
- Palabra clave (fr)
- Couche épaisse Couche épitaxique Densité dislocation Densité défaut Densité élevée Dislocation filetée Défaut empilement Dépôt chimique phase vapeur Epitaxie Germanium Germe cristallin Mécanisme croissance Recuit Rugosité Semiconducteur Silicium Transistor 6172N 6855A 6855L 8115G Si Substrat germanium Substrat silicium
- Palabra clave (in)
- Thick films Epitaxial layers Dislocation density Defect density High density Threading dislocation Stacking faults CVD Epitaxy Germanium Crystal seeds Growth mechanism Annealing Roughness Semiconductor materials Silicon Transistors
- Palabra clave (es)
- Densidad defecto Densidad elevada Dislocación aterrajada Mecanismo crecimiento
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72N Stacking faults and other planar or extended defects
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55L Defects and impurities: doping, implantation, distribution, concentration, etc
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Disciplina
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 25637555
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2011.10.099 
https://dx.doi.org/10.1016/j.tsf.2011.10.099
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