Influence of the growth temperature and substrate orientation on the layer properties of MOVPE-grown (Ga,In)(As,P)/GaAs
- Author
- KNAUER, A1 ; RECHENBERG, I1 ; BUGGE, F1 ; GRAMLICH, S1 ; OELGARDT, G2 ; OSTER, A1 ; WEYERS, M1
[1] Ferdinand-Braun-Institut für Höchstfrequenztechnik, Rudower Chaussee 5, 12489 Berlin, Germany
[2] Universität Leipzig, Leipzig, Germany - Conference title
- Metalorganic vapour phase epitaxy 1996
- Conference name
- ICMOVPE-VIII International Conference on Metalorganic Vapour Phase Epitaxy (8 ; Cardiff, Wales 1996-06-09)
- Author (monograph)
- MULLIN, J. B (Editor)1
British Association of Crystal Growth, United Kingdom (Funder/Sponsor)
[1] Electronic Materials Consultancy, Malvern, United Kingdom - Source
Journal of crystal growth. 1997, Vol 170, Num 1-4, pp 281-286 ; ref : 11 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Composé quaternaire Croissance cristalline Diode laser Effet température Etude expérimentale Gallium arséniure Gallium phosphure Hétérostructure Indium arséniure Indium phosphure Laser semiconducteur Luminescence Matériau laser Matériau optique Méthode MOVPE Orientation cristalline Substrat As Ga In P In(1-x)Ga(x)As(y)P(1-y) Composé minéral
- Keyword (en)
- Quaternary compounds Crystal growth Laser diodes Temperature effects Experimental study Gallium arsenides Gallium phosphides Heterostructures Indium arsenides Indium phosphides Semiconductor lasers Luminescence Laser materials Optical materials MOVPE method Crystal orientation Substrates Inorganic compounds
- Keyword (es)
- Método MOVPE
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B70 Optical materials / 001B40B70H Laser materials
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Pacs
- 4270H Laser materials
- Discipline
- Physics : optics Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 2570854
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0022-0248(96)00643-4 
https://dx.doi.org/10.1016/S0022-0248(96)00643-4
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