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Metal-semiconductor transition of graphene nanoribbons with different addends

Autor
ZHANG, X. W1 ; DAI, B1 ; LIU, J. S1 ; YANG, G. W2
[1] State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010, China
[2] State Key Laboratory of Optoelectronic Materials and Technologies, Institute of Optoelectronic and Functional Composite Materials, School of Physics Science & Engineering, Sun Yat-Sen University, Guangzhou 510275, China
Fuente

Physica. B, Condensed matter. 2012, Vol 407, Num 4, pp 571-575, 5 p ; ref : 25 ref

ISSN
0921-4526
Campo Científico
Crystallography; Condensed state physics
Editor
Elsevier, Kidlington
País de la publicación
United Kingdom
Tipo de documento
Article
Idioma
English
Palabra clave de autor
Electronic properties Graphene nanoribbon LCAO Surpercell
Palabra clave (fr)
Approximation liaison forte Bande interdite Graphène Groupe méthyle Méthode LCAO Nanoruban Terminaison surface Transition métal semiconducteur 7322
Palabra clave (in)
Tight binding approximation Energy gap Graphene Methyl group LCAO method Nanotape Surface termination Semiconductor metal transition
Palabra clave (es)
Graphene Grupo metilo Nanocinta Transición metal semiconductor
Clasificación
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C22 Electronic structure of nanoscale materials : clusters, nanoparticles, nanotubes, and nanocrystals

Disciplina
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Procedencia
Inist-CNRS
Base de datos
PASCAL
Identificador INIST
25755867

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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