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Crystallographic ordering and the effects on magnetic susceptibility in some semiconductor alloys of MnIII2VI4 compounds

Author
WOOLLEY, J. C1 ; BRUN DEL RE, R1 ; QUINTERO, M2
[1] Ottawa-Carleton Institute for Physics, University of Ottawa, 150 Louis Pasteur, P.O.B. 450, Ottawa, Ontario K1N 6N5, Canada
[2] Centro de Estudios de Semiconductores, Departamento de Fisica, Universidad de Los Andes, Mérida, Venezuela
Source

Physica status solidi. A. Applied research. 1997, Vol 159, Num 2, pp 361-373 ; ref : 19 ref

CODEN
PSSABA
ISSN
0031-8965
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Wiley-VCH, Berlin
Publication country
Germany
Document type
Article
Language
English
Keyword (fr)
ATD Diagramme phase Dépendance température Etude expérimentale Matériau semiconducteur Relation ordre Structure blende Susceptibilité magnétique Transformation phase Composé minéral
Keyword (en)
DTA Phase diagrams Temperature dependence Experimental study Semiconductor materials Ordering Blende structure Magnetic susceptibility Phase transformations Inorganic compounds
Keyword (es)
Relación orden Estructura blenda
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70E Magnetic properties and materials / 001B70E30 Magnetically ordered materials: other intrinsic properties / 001B70E30C Saturation moments and magnetic susceptibilities

Pacs
7530C Saturation moments and magnetic susceptibilities

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
2582236

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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