A Novel 1T-1D DRAM Cell for Embedded Application
- Author
- CAO, Cheng-Wei1 ; ZANG, Song-Gan2 ; XI LIN1 ; SUN, Qing-Qing1 ; XING, Charles3 ; WANG, Peng-Fei1 ; ZHANG, David Wei1
[1] Department of Microelectronics, Fudan University, Shanghai 200433, China
[2] Advanced Micro Devices Shanghai Research and Development Center, Shanghai 201203, China
[3] Semiconductor Manufacturing International Corporation, Shanghai 201203, China - Source
I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 5, pp 1304-1310, 7 p ; ref : 14 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- 1T-1D embedded dynamic random access memory (DRAM) system-on-chip tunneling field-effect transistor (TFET)
- Keyword (fr)
- Anode Circuit intégré Compatibilité Conception assistée Conception circuit Diode Dispositif à mémoire Evaluation performance Mémoire accès direct dynamique Seuil tension Système sur puce Technologie MOS Transistor MOS grille flottante Transistor MOSFET Transistor effet champ Transistor tunnel Amplificateur de détection Mémoire accès direct Mémoire non volatile
- Keyword (en)
- Anode Integrated circuit Compatibility Computer aided design Circuit design Diode Memory devices Performance evaluation Dynamic random access memory Voltage threshold System on a chip MOS technology Floating gate MOS transistor MOSFET Field effect transistor Tunnel transistors Sense amplifier Random access memory Non volatile memory
- Keyword (es)
- Anodo Circuito integrado Compatibilidad Concepción asistida Diseño circuito Diodo Evaluación prestación Umbral tensión Sistema sobre pastilla Tecnología MOS Transistor MOS rejilla flotante Transistor efecto campo Memoria acceso directo Memoria no volátil
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F03 Diodes
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06B Integrated circuits by function (including memories and processors)
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03I Storage and reproduction of information / 001D03I02 Magnetic and optical mass memories
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 25827287
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2012.2187060 
https://dx.doi.org/10.1109/TED.2012.2187060
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