In-situ analysis of positive and negative energetic ions generated during Sn-doped In2O3 deposition by reactive sputtering
- Author
- TSUKAMOTO, Naoki1 ; TAZAWA, Toshiyuki1 ; OKA, Nobuto1 ; SAITO, Motoaki2 ; SHIGESATO, Yuzo1
[1] Graduate School of Science and Engineering, Aoyama Gakuin University, J410, 5-10-1 Fuchinobe Sagamihara-shi, Chyuou-ku, Kanagawa 229-8558, Japan
[2] Canon Anelva Tech. Corp. 5-8-1, Yotsuya, Fuchu-shi, Tokyo 183-8508, Japan - Conference title
- Transparent Conductive Materials (TCM 2010)
- Conference name
- International Symposia on Transparent Conductive Materials (TCM 2010) (TCM 2010) (Analipsi/Hersonissos, Crete 2011-10-17)
- Author (monograph)
- KIRIAKIDIS, George (Editor)
University of Crete, Physics Department, Greece (Organiser of meeting)
Foundation for Research and Technology - Hellas (FORTH), Institute of Electronic Structure and Lasers (IESL), Greece (Organiser of meeting) - Source
Thin solid films. 2011, Vol 520, Num 4, pp 1182-1185, 4 p ; ref : 20 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- In-situ analysis Negative ions Positive ions Reactive sputtering Sn-doped In2O3 (ITO)
- Keyword (fr)
- Addition étain Couche oxyde Diagnostic plasma Dépôt physique phase vapeur Etain alliage Ion positif Oxyde d'indium Oxyde d'étain Pulvérisation réactive 5270K 8115C In2O3
- Keyword (en)
- Tin additions Oxide layer Plasma diagnostics Physical vapor deposition Tin alloys Positive ions Indium oxide Tin oxide Reactive sputtering
- Keyword (es)
- Capa óxido Indio óxido Estaño óxido
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B50 Physics of gases, plasmas and electric discharges / 001B50B Physics of plasmas and electric discharges / 001B50B70 Plasma diagnostic techniques and instrumentation / 001B50B70K Optical (ultraviolet, visible, infrared) measurements
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Discipline
- Physics and materials science Physics of gases, plasmas and electric discharges
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 25856043
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Access to the document
Install on your browser
DOI
10.1016/j.tsf.2011.04.143 
https://dx.doi.org/10.1016/j.tsf.2011.04.143
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.tsf.2011.04.143\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:122:\"In-situ analysis of positive and negative energetic ions generated during Sn-doped In2O3 deposition by reactive sputtering\";s:9:\"\u0000*\u0000jtitle\";s:16:\"Thin solid films\";s:9:\"\u0000*\u0000stitle\";s:16:\"Thin solid films\";s:7:\"\u0000*\u0000date\";s:4:\"2011\";s:9:\"\u0000*\u0000volume\";s:3:\"520\";s:8:\"\u0000*\u0000issue\";s:1:\"4\";s:8:\"\u0000*\u0000spage\";s:4:\"1182\";s:8:\"\u0000*\u0000epage\";s:4:\"1185\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0040-6090\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"TSUKAMOTO\";s:10:\"\u0000*\u0000aufirst\";s:5:\"Naoki\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:17:\"TAZAWA, Toshiyuki\";i:1;s:11:\"OKA, Nobuto\";i:2;s:14:\"SAITO, Motoaki\";i:3;s:15:\"SHIGESATO, Yuzo\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"THSFAP\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:43:\"Transparent Conductive Materials (TCM 2010)\";s:8:\"\u0000*\u0000title\";s:122:\"In-situ analysis of positive and negative energetic ions generated during Sn-doped In2O3 deposition by reactive sputtering\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.tsf.2011.04.143\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:122:\"In-situ analysis of positive and negative energetic ions generated during Sn-doped In2O3 deposition by reactive sputtering\";s:9:\"\u0000*\u0000jtitle\";s:16:\"Thin solid films\";s:9:\"\u0000*\u0000stitle\";s:16:\"Thin solid films\";s:7:\"\u0000*\u0000date\";s:4:\"2011\";s:9:\"\u0000*\u0000volume\";s:3:\"520\";s:8:\"\u0000*\u0000issue\";s:1:\"4\";s:8:\"\u0000*\u0000spage\";s:4:\"1182\";s:8:\"\u0000*\u0000epage\";s:4:\"1185\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0040-6090\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"TSUKAMOTO\";s:10:\"\u0000*\u0000aufirst\";s:5:\"Naoki\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:17:\"TAZAWA, Toshiyuki\";i:1;s:11:\"OKA, Nobuto\";i:2;s:14:\"SAITO, Motoaki\";i:3;s:15:\"SHIGESATO, Yuzo\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"THSFAP\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:43:\"Transparent Conductive Materials (TCM 2010)\";s:8:\"\u0000*\u0000title\";s:122:\"In-situ analysis of positive and negative energetic ions generated during Sn-doped In2O3 deposition by reactive sputtering\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.tsf.2011.04.143\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.tsf.2011.04.143\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:122:\"In-situ analysis of positive and negative energetic ions generated during Sn-doped In2O3 deposition by reactive sputtering\";s:9:\"\u0000*\u0000jtitle\";s:16:\"Thin solid films\";s:9:\"\u0000*\u0000stitle\";s:16:\"Thin solid films\";s:7:\"\u0000*\u0000date\";s:4:\"2011\";s:9:\"\u0000*\u0000volume\";s:3:\"520\";s:8:\"\u0000*\u0000issue\";s:1:\"4\";s:8:\"\u0000*\u0000spage\";s:4:\"1182\";s:8:\"\u0000*\u0000epage\";s:4:\"1185\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0040-6090\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"TSUKAMOTO\";s:10:\"\u0000*\u0000aufirst\";s:5:\"Naoki\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:17:\"TAZAWA, Toshiyuki\";i:1;s:11:\"OKA, Nobuto\";i:2;s:14:\"SAITO, Motoaki\";i:3;s:15:\"SHIGESATO, Yuzo\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"THSFAP\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:43:\"Transparent Conductive Materials (TCM 2010)\";s:8:\"\u0000*\u0000title\";s:122:\"In-situ analysis of positive and negative energetic ions generated during Sn-doped In2O3 deposition by reactive sputtering\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.tsf.2011.04.143\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:122:\"In-situ analysis of positive and negative energetic ions generated during Sn-doped In2O3 deposition by reactive sputtering\";s:9:\"\u0000*\u0000jtitle\";s:16:\"Thin solid films\";s:9:\"\u0000*\u0000stitle\";s:16:\"Thin solid films\";s:7:\"\u0000*\u0000date\";s:4:\"2011\";s:9:\"\u0000*\u0000volume\";s:3:\"520\";s:8:\"\u0000*\u0000issue\";s:1:\"4\";s:8:\"\u0000*\u0000spage\";s:4:\"1182\";s:8:\"\u0000*\u0000epage\";s:4:\"1185\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0040-6090\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"TSUKAMOTO\";s:10:\"\u0000*\u0000aufirst\";s:5:\"Naoki\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:17:\"TAZAWA, Toshiyuki\";i:1;s:11:\"OKA, Nobuto\";i:2;s:14:\"SAITO, Motoaki\";i:3;s:15:\"SHIGESATO, Yuzo\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"THSFAP\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:43:\"Transparent Conductive Materials (TCM 2010)\";s:8:\"\u0000*\u0000title\";s:122:\"In-situ analysis of positive and negative energetic ions generated during Sn-doped In2O3 deposition by reactive sputtering\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:25:\"10.1016\/j.tsf.2011.04.143\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:122:\"In-situ analysis of positive and negative energetic ions generated during Sn-doped In2O3 deposition by reactive sputtering\";s:9:\"\u0000*\u0000jtitle\";s:16:\"Thin solid films\";s:9:\"\u0000*\u0000stitle\";s:16:\"Thin solid films\";s:7:\"\u0000*\u0000date\";s:4:\"2011\";s:9:\"\u0000*\u0000volume\";s:3:\"520\";s:8:\"\u0000*\u0000issue\";s:1:\"4\";s:8:\"\u0000*\u0000spage\";s:4:\"1182\";s:8:\"\u0000*\u0000epage\";s:4:\"1185\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0040-6090\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:9:\"TSUKAMOTO\";s:10:\"\u0000*\u0000aufirst\";s:5:\"Naoki\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:17:\"TAZAWA, Toshiyuki\";i:1;s:11:\"OKA, Nobuto\";i:2;s:14:\"SAITO, Motoaki\";i:3;s:15:\"SHIGESATO, Yuzo\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"THSFAP\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:43:\"Transparent Conductive Materials (TCM 2010)\";s:8:\"\u0000*\u0000title\";s:122:\"In-situ analysis of positive and negative energetic ions generated during Sn-doped In2O3 deposition by reactive sputtering\";s:8:\"\u0000*\u0000place\";s:9:\"Amsterdam\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
