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Morphology of TiN thin films grown on SiO2 by reactive high power impulse magnetron sputtering

Author
MAGNUS, F1 ; INGASON, A. S1 2 ; SVEINSSON, O. B1 ; OLAFSSON, S1 ; GUDMUNDSSON, J. T1 3
[1] Science Institute, University of Iceland, Dunhaga 3, 107 Reykjavik, Iceland
[2] Thin Film Physics, Department of Physics (IFM), Linköping University, Linköping 581 83, Sweden
[3] University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, 800 Dong Chuan Road, Shanghai, 200240, China
Conference title
Proceedings of the 38th International Conference on Metallurgical Coatings and Thin Films (ICMCTF), San Diego, California (USA), May 2-6, 2011
Conference name
International Conference on Metallurgical Coatings and Thin Films (ICMCTF) (ICMCTF) (38 ; San Diego, California 2011-05-02)
Author (monograph)
ABADIAS, Gregory (Editor)1 ; MURATORE, Chris (Editor)2 ; PETROV, Ivan (Editor)3 ; REBHOLZ, Claus (Editor)4 ; STÜBER, Michael (Editor)5
[1] University of Poitiers, Laboratoire de Physique des Matériaux, CNRS, SP2MI, Teleport 2, Bd. Marie et Pierre Curie, 86982 Chasseneuil Futuroscope, France
[2] Air Force Research Laboratory, Materials and Manufacturing Directorate, Thermal Sciences & Materials Branch, Wright-Patterson AFB, OH 45433, United States
[3] University of Illinois, Frederick Seitz Materials Research Laboratory, 104 S. Goodwin Avenue, Urbana, IL 61801, United States
[4] University of Cyprus, Mechanical & Manufacturing Engineering, 75 Kallipoleos Street, 1678 Nicosia, Cyprus
[5] Karlsruhe Institute of Technology (KIT), Institute for Applied Materials (IAM), Hermann-von-Helmoltz-Platz 1, 76344 Eggenstein-Leopoldshafen, Germany
Source

Thin solid films. 2011, Vol 520, Num 5, pp 1621-1624, 4 p ; ref : 30 ref

CODEN
THSFAP
ISSN
0040-6090
Scientific domain
Crystallography; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Author keyword
High power impulse magnetron sputtering Ion-assisted deposition Thin films Titanium nitride
Keyword (fr)
Couche mince Cristallite Croissance film Diffraction RX Dépendance température Dépôt physique phase vapeur Dépôt pulvérisation Grosseur grain Morphologie Mécanisme croissance Méthode IBAD Nitrure de titane Plan expérience Pulvérisation cathodique 6855A 6855J 8115C 8115J Substrat SiO2
Keyword (en)
Thin films Crystallites Film growth XRD Temperature dependence Physical vapor deposition Sputter deposition Grain size Morphology Growth mechanism Ion beam assisted deposition method Titanium nitride Experimental design Cathode sputtering
Keyword (es)
Mecanismo crecimiento Titanio nitruro
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering

Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15J Ion and electron beam-assisted deposition; ion plating

Discipline
Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
25856125

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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